Epitaxial Yttria-stabilized Zirconia (YSZ) film deposited on Si(100) substrate by YAG laser

Satoru Kaneko, Kensuke Akiyama, Takeshi Ito, Hiroyasu Yuasa, Shinji Yasaka, Masahiko Mitsuhashi, Yoshitada Shimizu, Seishiro Ohya, Keisuke Saito, Takayuki Watanabe, Shoji Okamoto, Hiroshi Funakubo

Research output: Contribution to journalReview article

Abstract

The fourth harmonic of Q-switched YAG was used to deposit yttria-stabilized zirconia (YSZ) film on Si(100) substrate. A secondary function generator was employed to modulate Q-switch while the primary generator was synchronized with flash lamps to decrease repetition rate of laser beam. At rate of 2 Hz, beam energy increased ∼ 50% per pulse. YSZ film was deposited on Si(100) using 3 mol% YSZ sintered pellet and ∼ 9 mol% single crystal YSZ as targets. In order to improve crystallinity of YSZ, two-step deposition was also carried out; deposition in oxygen insufficient atmosphere followed by oxygen sufficient atmosphere. The full width at half maxim (FWHM) of rocking curve showed ∼1.4° for the film produced by two-step deposition on Si substrate with thin SiO2 layer using single crystal YSZ as a target.

Original languageEnglish
Pages (from-to)581-584
Number of pages4
JournalShinku/Journal of the Vacuum Society of Japan
Volume47
Issue number7
DOIs
Publication statusPublished - Jan 1 2004
Externally publishedYes

Fingerprint

Yttria stabilized zirconia
yttria-stabilized zirconia
YAG lasers
Lasers
Substrates
Single crystals
function generators
Oxygen
Function generators
atmospheres
flash lamps
single crystals
oxygen
Electric lamps
pellets
yttrium-aluminum garnet
Laser beams
repetition
crystallinity
generators

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Kaneko, S., Akiyama, K., Ito, T., Yuasa, H., Yasaka, S., Mitsuhashi, M., ... Funakubo, H. (2004). Epitaxial Yttria-stabilized Zirconia (YSZ) film deposited on Si(100) substrate by YAG laser. Shinku/Journal of the Vacuum Society of Japan, 47(7), 581-584. https://doi.org/10.3131/jvsj.47.581

Epitaxial Yttria-stabilized Zirconia (YSZ) film deposited on Si(100) substrate by YAG laser. / Kaneko, Satoru; Akiyama, Kensuke; Ito, Takeshi; Yuasa, Hiroyasu; Yasaka, Shinji; Mitsuhashi, Masahiko; Shimizu, Yoshitada; Ohya, Seishiro; Saito, Keisuke; Watanabe, Takayuki; Okamoto, Shoji; Funakubo, Hiroshi.

In: Shinku/Journal of the Vacuum Society of Japan, Vol. 47, No. 7, 01.01.2004, p. 581-584.

Research output: Contribution to journalReview article

Kaneko, S, Akiyama, K, Ito, T, Yuasa, H, Yasaka, S, Mitsuhashi, M, Shimizu, Y, Ohya, S, Saito, K, Watanabe, T, Okamoto, S & Funakubo, H 2004, 'Epitaxial Yttria-stabilized Zirconia (YSZ) film deposited on Si(100) substrate by YAG laser', Shinku/Journal of the Vacuum Society of Japan, vol. 47, no. 7, pp. 581-584. https://doi.org/10.3131/jvsj.47.581
Kaneko, Satoru ; Akiyama, Kensuke ; Ito, Takeshi ; Yuasa, Hiroyasu ; Yasaka, Shinji ; Mitsuhashi, Masahiko ; Shimizu, Yoshitada ; Ohya, Seishiro ; Saito, Keisuke ; Watanabe, Takayuki ; Okamoto, Shoji ; Funakubo, Hiroshi. / Epitaxial Yttria-stabilized Zirconia (YSZ) film deposited on Si(100) substrate by YAG laser. In: Shinku/Journal of the Vacuum Society of Japan. 2004 ; Vol. 47, No. 7. pp. 581-584.
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AU - Yuasa, Hiroyasu

AU - Yasaka, Shinji

AU - Mitsuhashi, Masahiko

AU - Shimizu, Yoshitada

AU - Ohya, Seishiro

AU - Saito, Keisuke

AU - Watanabe, Takayuki

AU - Okamoto, Shoji

AU - Funakubo, Hiroshi

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AB - The fourth harmonic of Q-switched YAG was used to deposit yttria-stabilized zirconia (YSZ) film on Si(100) substrate. A secondary function generator was employed to modulate Q-switch while the primary generator was synchronized with flash lamps to decrease repetition rate of laser beam. At rate of 2 Hz, beam energy increased ∼ 50% per pulse. YSZ film was deposited on Si(100) using 3 mol% YSZ sintered pellet and ∼ 9 mol% single crystal YSZ as targets. In order to improve crystallinity of YSZ, two-step deposition was also carried out; deposition in oxygen insufficient atmosphere followed by oxygen sufficient atmosphere. The full width at half maxim (FWHM) of rocking curve showed ∼1.4° for the film produced by two-step deposition on Si substrate with thin SiO2 layer using single crystal YSZ as a target.

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