Epitaxy in Fe3Si/FeSi2 superlattices prepared by facing target direct-current sputtering at room tempertaure

Kaoru Takeda, Tsuyoshi Yoshitake, Dai Nakagauchi, Tetsuya Ogawa, Daisuke Hara, Masaru Itakura, Noriyuki Kuwano, Yoshitsugu Tomoriyo, Toshinori Kajiwara, Kunihito Nagayama

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Fe3Si/FeSi2 superlattices were prepared on Si(111) at two deposition rates by facing target direct-current sputtering. For the deposition rates of 2.0 nm/min for Fe3Si and 1.3 nm/min for FeSi 2, the Fe3Si layers were nonoriented. On the other hand, for half-deposition rates, the Fe3Si layers were epitaxially grown not only on Si(111) but also up to the top layer across the FeSi2 layers. The antiferromagnetic interlayer coupling between the Fe3Si layers was induced in the epitaxial superlattices, whereas it disappeared in the nonepitaxial superlattices. The regular accumulation of highly oriented Fe 3Si layers is crucial for the interlayer coupling induction.

Original languageEnglish
Pages (from-to)7846-7848
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number12
DOIs
Publication statusPublished - Dec 6 2007

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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