Erratum: Border trap evaluation for SiO₂/GeO₂/Ge gate stacks using deep-level transient spectroscopy (J. Appl. Phys. (2018) 124 (205303) DOI: 10.1063/1.505529)

There is an inadvertent error in the published article.1 The effective masses of electron and hole in GeO2 are missing in the calculation of the density of border trap (Nbt). After including the effective masses, the correct Nbt values of p- and n-MOSCAPs should be 3 and 0.65 times the published values, respectively. As a result, the Nbt values of both p- and n-MOSCAPs are in the same range (∼1018 cm−3). To make corrections, Figs. 9, 11, 12, and 14 in the published article should be replaced with Figs. 1–4 in this erratum, respectively. In addition, an error was found in the caption of Fig. 13, where the word “valence” should be corrected as “conduction.” A misprinted operation symbol was also found in Eq. (A8). The correct equation is as follows: (Formula Presented). None of these corrections alter the conclusion of the published paper. (Figure Presented).