Erratum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (Nanotechnology (2021) 32 (055702) DOI: 10.1088/1361-6528/abbddb)

M. Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa, Hiroshi Ikenoue, Sachie Fujikawa, Eriko Matsuura, Yukio Kashima, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama

Research output: Contribution to journalComment/debatepeer-review

Abstract

There is a small error in the conclusion to this article. The penultimate sentence wrongly refers to n-AlGaN, when it should be p-AlGaN. The correct sentence should read: Also, the hole-trap level appeared to have been effectively suppressed by laser treatment, and reasonably improved hole concentration up to 2 × 1016 cm-3 and the resistivity around 24 ω.cm in the lightly polarized p-AlGaN HSL at RT was achieved.

Original languageEnglish
Article number369501
JournalNanotechnology
Volume32
Issue number36
DOIs
Publication statusPublished - Sep 3 2021

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Erratum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (Nanotechnology (2021) 32 (055702) DOI: 10.1088/1361-6528/abbddb)'. Together they form a unique fingerprint.

Cite this