There is a small error in the conclusion to this article. The penultimate sentence wrongly refers to n-AlGaN, when it should be p-AlGaN. The correct sentence should read: Also, the hole-trap level appeared to have been effectively suppressed by laser treatment, and reasonably improved hole concentration up to 2 × 1016 cm-3 and the resistivity around 24 ω.cm in the lightly polarized p-AlGaN HSL at RT was achieved.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering