The authors investigated the influence of O2 and H2 O molecules absorbed in carbon-60 (C60) films on their electron trap and n -type field-effect transistor (FET) characteristics. Electron traps in the C60 films were directly measured using a thermally stimulated current (TSC) technique. The TSC results demonstrate that the absorption of O2 and H2 O molecules in the C60 films induced an increase in the electron trap concentration, which degrades C60 FET characteristics. By annealing the C60 films at 100 °C for 8 h, the electron trap concentrations were markedly lowered, enhancing the C60 FET characteristics. An electron mobility of 0.017 cm2 V s and a current on/off ratio of 106 were observed from the degassed C60 FETs.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)