Estimation of growth rate in unidirectionally solidified multicrystalline silicon by the growth-induced striation method

R. Bairava Ganesh, Hitoshi Matsuo, Takahiro Kawamura, Yoshihiro Kangawa, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Multicrystalline silicon was grown by unidirectional solidification method using the accelerated crucible rotation technique. The application of the accelerated crucible rotation technique in unidirectional solidification method induced growth striations across the axial direction of the grown crystal. This striation pattern was observed from carbon concentration distribution, obtained by using Fourier transform infrared spectroscopy. The generated striation pattern was found to be weak and discontinuous. Some striations were absent, probably due to back melting, caused during each crucible rotation. From the growth striations and applied time period in crucible rotation, the growth rate was estimated by using Fourier transformation analysis.

Original languageEnglish
Pages (from-to)2697-2701
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number11
DOIs
Publication statusPublished - May 15 2008

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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