Etching characteristics of organic low-k films interpreted by internal parameters employing a combinatorial plasma process in an inductively coupled H2/N2 plasma

Chang Sung Moon, Keigo Takeda, Makoto Sekine, Yuichi Setsuhara, Masaharu Shiratani, Masaru Hori

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The development of plasma etching technology is being held back due to the use of trial and error methods when scaling down and high integration. Such a continuous development could result in enormous losses in term of cost and time. It is impossible to overcome without a different approach. In this study, we have tried to accumulate a large amount of data on internal parameters and based on database, the etching characteristics could be interpreted with a high reproducibility. In order to realized faster data acquisitions, we developed a combinatorial plasma process (CPP) for obtaining a large amount of data in a single trial from spatially inhomogeneous plasma distribution regarding etching of organic low-k films in H2/N2 plasmas. In addition, synergetic effects of other internal parameters such as vacuum ultraviolet radiation and radicals without ion bombardment were clarified. Finally, the high performance of CPP for faster data acquisitions was shown and the etching characteristics in terms of internal parameters such as ion fluxes and the H/ (H+N) radical flux ratio were demonstrated.

Original languageEnglish
Article number113310
JournalJournal of Applied Physics
Volume107
Issue number11
DOIs
Publication statusPublished - Jun 1 2010

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etching
data acquisition
far ultraviolet radiation
plasma etching
bombardment
ions
costs
scaling

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Etching characteristics of organic low-k films interpreted by internal parameters employing a combinatorial plasma process in an inductively coupled H2/N2 plasma. / Moon, Chang Sung; Takeda, Keigo; Sekine, Makoto; Setsuhara, Yuichi; Shiratani, Masaharu; Hori, Masaru.

In: Journal of Applied Physics, Vol. 107, No. 11, 113310, 01.06.2010.

Research output: Contribution to journalArticle

@article{92260ef96902492cbbe952b0d93c4f4b,
title = "Etching characteristics of organic low-k films interpreted by internal parameters employing a combinatorial plasma process in an inductively coupled H2/N2 plasma",
abstract = "The development of plasma etching technology is being held back due to the use of trial and error methods when scaling down and high integration. Such a continuous development could result in enormous losses in term of cost and time. It is impossible to overcome without a different approach. In this study, we have tried to accumulate a large amount of data on internal parameters and based on database, the etching characteristics could be interpreted with a high reproducibility. In order to realized faster data acquisitions, we developed a combinatorial plasma process (CPP) for obtaining a large amount of data in a single trial from spatially inhomogeneous plasma distribution regarding etching of organic low-k films in H2/N2 plasmas. In addition, synergetic effects of other internal parameters such as vacuum ultraviolet radiation and radicals without ion bombardment were clarified. Finally, the high performance of CPP for faster data acquisitions was shown and the etching characteristics in terms of internal parameters such as ion fluxes and the H/ (H+N) radical flux ratio were demonstrated.",
author = "Moon, {Chang Sung} and Keigo Takeda and Makoto Sekine and Yuichi Setsuhara and Masaharu Shiratani and Masaru Hori",
year = "2010",
month = "6",
day = "1",
doi = "10.1063/1.3415535",
language = "English",
volume = "107",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Etching characteristics of organic low-k films interpreted by internal parameters employing a combinatorial plasma process in an inductively coupled H2/N2 plasma

AU - Moon, Chang Sung

AU - Takeda, Keigo

AU - Sekine, Makoto

AU - Setsuhara, Yuichi

AU - Shiratani, Masaharu

AU - Hori, Masaru

PY - 2010/6/1

Y1 - 2010/6/1

N2 - The development of plasma etching technology is being held back due to the use of trial and error methods when scaling down and high integration. Such a continuous development could result in enormous losses in term of cost and time. It is impossible to overcome without a different approach. In this study, we have tried to accumulate a large amount of data on internal parameters and based on database, the etching characteristics could be interpreted with a high reproducibility. In order to realized faster data acquisitions, we developed a combinatorial plasma process (CPP) for obtaining a large amount of data in a single trial from spatially inhomogeneous plasma distribution regarding etching of organic low-k films in H2/N2 plasmas. In addition, synergetic effects of other internal parameters such as vacuum ultraviolet radiation and radicals without ion bombardment were clarified. Finally, the high performance of CPP for faster data acquisitions was shown and the etching characteristics in terms of internal parameters such as ion fluxes and the H/ (H+N) radical flux ratio were demonstrated.

AB - The development of plasma etching technology is being held back due to the use of trial and error methods when scaling down and high integration. Such a continuous development could result in enormous losses in term of cost and time. It is impossible to overcome without a different approach. In this study, we have tried to accumulate a large amount of data on internal parameters and based on database, the etching characteristics could be interpreted with a high reproducibility. In order to realized faster data acquisitions, we developed a combinatorial plasma process (CPP) for obtaining a large amount of data in a single trial from spatially inhomogeneous plasma distribution regarding etching of organic low-k films in H2/N2 plasmas. In addition, synergetic effects of other internal parameters such as vacuum ultraviolet radiation and radicals without ion bombardment were clarified. Finally, the high performance of CPP for faster data acquisitions was shown and the etching characteristics in terms of internal parameters such as ion fluxes and the H/ (H+N) radical flux ratio were demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=77953634535&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953634535&partnerID=8YFLogxK

U2 - 10.1063/1.3415535

DO - 10.1063/1.3415535

M3 - Article

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 113310

ER -