Etching characteristics of SiO2 irradiated with focused ion beam

Taizoh Sadoh, H. Eguchi, A. Kenjo, M. Miyao

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

The etching characteristics of SiO2 films, which were irradiated with Si2+ focused ion beams, in a buffered HF solution were comprehensively investigated. Dependence of the etching rate on the dose was investigated. The rate increased with increasing dose (8 × 1013-1 × 1015 cm-2), however it decreased for doses exceeding a critical value (1 × 1015 cm-2). The TRIM simulation indicated that irradiation with this critical value resulted in the concentration of vacancies at the Si site equal to that of Si atoms in SiO2. These results can be explained by considering the enhancement of etching by vacancies and the retardation by implanted Si atoms. The retardation was confirmed experimentally.

Original languageEnglish
Pages (from-to)478-481
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume206
DOIs
Publication statusPublished - May 1 2003
Event13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: Sep 1 2002Sep 6 2002

Fingerprint

Focused ion beams
Etching
ion beams
etching
dosage
Vacancies
Atoms
atoms
Irradiation
irradiation
augmentation
simulation

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Etching characteristics of SiO2 irradiated with focused ion beam. / Sadoh, Taizoh; Eguchi, H.; Kenjo, A.; Miyao, M.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 206, 01.05.2003, p. 478-481.

Research output: Contribution to journalConference article

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