The etching characteristics of SiO2 films, which were irradiated with Si2+ focused ion beams, in a buffered HF solution were comprehensively investigated. Dependence of the etching rate on the dose was investigated. The rate increased with increasing dose (8 × 1013-1 × 1015 cm-2), however it decreased for doses exceeding a critical value (1 × 1015 cm-2). The TRIM simulation indicated that irradiation with this critical value resulted in the concentration of vacancies at the Si site equal to that of Si atoms in SiO2. These results can be explained by considering the enhancement of etching by vacancies and the retardation by implanted Si atoms. The retardation was confirmed experimentally.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - May 1 2003|
|Event||13th International conference on Ion beam modification of Mate - Kobe, Japan|
Duration: Sep 1 2002 → Sep 6 2002
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics