Eutectic solidification in hypoeutectic Al-Si alloys: Electron backscatter diffraction analysis

Kazuhiro Nogita, A. K. Dahle

Research output: Contribution to journalArticle

80 Citations (Scopus)

Abstract

Nucleation and growth of the eutectic in hypoeutectic Al-Si foundry alloys has been investigated by the electron backscatter diffraction (EBSD) mapping technique using a scanning electron microscope (SEM). Sample preparation procedures for optimizing mapping have been developed. To obtain a sufficiently smooth surface from a cast Al-Si eutectic microstructure for EBSD mapping, an appropriate preparation technique by ion milling was developed and applied instead of conventional electropolishing. By comparing the orientation of the aluminum in the eutectic to that of the surrounding primary aluminum dendrites, the growth mechanism of the eutectic can be determined. Two different results were found, in isolation or sometimes together, but distinct for different strontium contents: (1) crystallographic orientations of aluminum in eutectic and surrounding primary dendrites are identical, and (2) wide variation in orientations of the aluminum in the eutectic.

Original languageEnglish
Pages (from-to)305-310
Number of pages6
JournalMaterials Characterization
Volume46
Issue number4
DOIs
Publication statusPublished - Apr 1 2001

Fingerprint

Electron diffraction
eutectics
Eutectics
solidification
Solidification
Aluminum
diffraction
Crystal orientation
aluminum
Dendrites (metallography)
electrons
dendrites
electropolishing
Electrolytic polishing
foundries
preparation
Strontium
Foundries
strontium
casts

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Eutectic solidification in hypoeutectic Al-Si alloys : Electron backscatter diffraction analysis. / Nogita, Kazuhiro; Dahle, A. K.

In: Materials Characterization, Vol. 46, No. 4, 01.04.2001, p. 305-310.

Research output: Contribution to journalArticle

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