Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si: H films

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H2 bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH4, Si2H6, and Si2H8 densities, which is understood using the simple reaction model. While the ratios of [SimH2m+2]/[SiH4] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H2 bonds in the films CSiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the CSiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H2 bonds in a-Si:H films.

Original languageEnglish
Title of host publicationNovel Materials Processing by Advanced Electromagnetic Energy Sources
PublisherElsevier
Pages79-82
Number of pages4
ISBN (Print)9780080445045
DOIs
Publication statusPublished - Dec 1 2005

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Silanes
Film growth
Amorphous silicon

All Science Journal Classification (ASJC) codes

  • Energy(all)

Cite this

Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si : H films. / Koga, Kazunori; Kaguchi, Naoto; Shiratani, Masaharu; Watanabe, Yukio.

Novel Materials Processing by Advanced Electromagnetic Energy Sources. Elsevier, 2005. p. 79-82.

Research output: Chapter in Book/Report/Conference proceedingChapter

Koga, Kazunori ; Kaguchi, Naoto ; Shiratani, Masaharu ; Watanabe, Yukio. / Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si : H films. Novel Materials Processing by Advanced Electromagnetic Energy Sources. Elsevier, 2005. pp. 79-82
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AU - Watanabe, Yukio

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