Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si: H films

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H2 bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH4, Si2H6, and Si2H8 densities, which is understood using the simple reaction model. While the ratios of [SimH2m+2]/[SiH4] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H2 bonds in the films CSiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the CSiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H2 bonds in a-Si:H films.

Original languageEnglish
Title of host publicationNovel Materials Processing by Advanced Electromagnetic Energy Sources
PublisherElsevier
Pages79-82
Number of pages4
ISBN (Print)9780080445045
DOIs
Publication statusPublished - Dec 1 2005

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Energy(all)

Cite this