Abstract
This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H2 bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH4, Si2H6, and Si2H8 densities, which is understood using the simple reaction model. While the ratios of [SimH2m+2]/[SiH4] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H2 bonds in the films CSiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the CSiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H2 bonds in a-Si:H films.
| Original language | English |
|---|---|
| Title of host publication | Novel Materials Processing by Advanced Electromagnetic Energy Sources |
| Publisher | Elsevier |
| Pages | 79-82 |
| Number of pages | 4 |
| ISBN (Print) | 9780080445045 |
| DOIs | |
| Publication status | Published - Dec 1 2005 |
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All Science Journal Classification (ASJC) codes
- Energy(all)
Cite this
Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si : H films. / Koga, Kazunori; Kaguchi, Naoto; Shiratani, Masaharu; Watanabe, Yukio.
Novel Materials Processing by Advanced Electromagnetic Energy Sources. Elsevier, 2005. p. 79-82.Research output: Chapter in Book/Report/Conference proceeding › Chapter
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TY - CHAP
T1 - Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si
T2 - H films
AU - Koga, Kazunori
AU - Kaguchi, Naoto
AU - Shiratani, Masaharu
AU - Watanabe, Yukio
PY - 2005/12/1
Y1 - 2005/12/1
N2 - This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H2 bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH4, Si2H6, and Si2H8 densities, which is understood using the simple reaction model. While the ratios of [SimH2m+2]/[SiH4] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H2 bonds in the films CSiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the CSiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H2 bonds in a-Si:H films.
AB - This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H2 bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH4, Si2H6, and Si2H8 densities, which is understood using the simple reaction model. While the ratios of [SimH2m+2]/[SiH4] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H2 bonds in the films CSiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the CSiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H2 bonds in a-Si:H films.
UR - http://www.scopus.com/inward/record.url?scp=84884443874&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84884443874&partnerID=8YFLogxK
U2 - 10.1016/B978-008044504-5/50016-7
DO - 10.1016/B978-008044504-5/50016-7
M3 - Chapter
AN - SCOPUS:84884443874
SN - 9780080445045
SP - 79
EP - 82
BT - Novel Materials Processing by Advanced Electromagnetic Energy Sources
PB - Elsevier
ER -