Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si: H films

Kazunori Koga; Naoto Kaguchi; Masaharu Shiratani; Yukio Watanabe

doi:10.1016/B978-008044504-5/50016-7

Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si: H films

Kazunori Koga, Naoto Kaguchi, Masaharu Shiratani, Yukio Watanabe

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H₂ bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH₄, Si₂H₆, and Si₂H₈ densities, which is understood using the simple reaction model. While the ratios of [Si_mH_2m+2]/[SiH₄] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H₂ bonds in the films C_SiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the C_SiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H₂ bonds in a-Si:H films.

Original language	English
Title of host publication	Novel Materials Processing by Advanced Electromagnetic Energy Sources
Publisher	Elsevier
Pages	79-82
Number of pages	4
ISBN (Print)	9780080445045
DOIs	https://doi.org/10.1016/B978-008044504-5/50016-7
Publication status	Published - Dec 1 2005

Fingerprint

All Science Journal Classification (ASJC) codes

Energy(all)

Cite this

Koga, K., Kaguchi, N., Shiratani, M., & Watanabe, Y. (2005). Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si: H films. In Novel Materials Processing by Advanced Electromagnetic Energy Sources (pp. 79-82). Elsevier. https://doi.org/10.1016/B978-008044504-5/50016-7

@inbook{a25fa5e7c0db4abb9707d0f2a15223b3,

title = "Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si: H films",

abstract = "This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H2 bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH4, Si2H6, and Si2H8 densities, which is understood using the simple reaction model. While the ratios of [SimH2m+2]/[SiH4] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H2 bonds in the films CSiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the CSiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H2 bonds in a-Si:H films.",

author = "Kazunori Koga and Naoto Kaguchi and Masaharu Shiratani and Yukio Watanabe",

year = "2005",

month = "12",

day = "1",

doi = "10.1016/B978-008044504-5/50016-7",

language = "English",

isbn = "9780080445045",

pages = "79--82",

booktitle = "Novel Materials Processing by Advanced Electromagnetic Energy Sources",

publisher = "Elsevier",

address = "Netherlands",

}

TY - CHAP

T1 - Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si

T2 - H films

AU - Koga, Kazunori

AU - Kaguchi, Naoto

AU - Shiratani, Masaharu

AU - Watanabe, Yukio

PY - 2005/12/1

Y1 - 2005/12/1

N2 - This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H2 bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH4, Si2H6, and Si2H8 densities, which is understood using the simple reaction model. While the ratios of [SimH2m+2]/[SiH4] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H2 bonds in the films CSiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the CSiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H2 bonds in a-Si:H films.

AB - This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H2 bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH4, Si2H6, and Si2H8 densities, which is understood using the simple reaction model. While the ratios of [SimH2m+2]/[SiH4] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H2 bonds in the films CSiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the CSiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H2 bonds in a-Si:H films.

UR - http://www.scopus.com/inward/record.url?scp=84884443874&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884443874&partnerID=8YFLogxK

U2 - 10.1016/B978-008044504-5/50016-7

DO - 10.1016/B978-008044504-5/50016-7

M3 - Chapter

AN - SCOPUS:84884443874

SN - 9780080445045

SP - 79

EP - 82

BT - Novel Materials Processing by Advanced Electromagnetic Energy Sources

PB - Elsevier

ER -

Access to Document

10.1016/B978-008044504-5/50016-7