Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si: H films

Kazunori Koga; Naoto Kaguchi; Masaharu Shiratani; Yukio Watanabe

doi:10.1016/B978-008044504-5/50016-7

Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si: H films

Kazunori Koga, Naoto Kaguchi, Masaharu Shiratani, Yukio Watanabe

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H₂ bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH₄, Si₂H₆, and Si₂H₈ densities, which is understood using the simple reaction model. While the ratios of [Si_mH_2m+2]/[SiH₄] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H₂ bonds in the films C_SiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the C_SiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H₂ bonds in a-Si:H films.

Original language	English
Title of host publication	Novel Materials Processing by Advanced Electromagnetic Energy Sources
Publisher	Elsevier
Pages	79-82
Number of pages	4
ISBN (Print)	9780080445045
DOIs	https://doi.org/10.1016/B978-008044504-5/50016-7
Publication status	Published - Dec 1 2005

All Science Journal Classification (ASJC) codes

Energy(all)

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10.1016/B978-008044504-5/50016-7

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title = "Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si: H films",

abstract = "This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H2 bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH4, Si2H6, and Si2H8 densities, which is understood using the simple reaction model. While the ratios of [SimH2m+2]/[SiH4] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H2 bonds in the films CSiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the CSiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H2 bonds in a-Si:H films.",

author = "Kazunori Koga and Naoto Kaguchi and Masaharu Shiratani and Yukio Watanabe",

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TY - CHAP

T1 - Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si

T2 - H films

AU - Koga, Kazunori

AU - Kaguchi, Naoto

AU - Shiratani, Masaharu

AU - Watanabe, Yukio

PY - 2005/12/1

Y1 - 2005/12/1

N2 - This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H2 bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH4, Si2H6, and Si2H8 densities, which is understood using the simple reaction model. While the ratios of [SimH2m+2]/[SiH4] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H2 bonds in the films CSiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the CSiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H2 bonds in a-Si:H films.

AB - This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H2 bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH4, Si2H6, and Si2H8 densities, which is understood using the simple reaction model. While the ratios of [SimH2m+2]/[SiH4] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H2 bonds in the films CSiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the CSiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H2 bonds in a-Si:H films.

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