Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Tomihisa Tachibana, Takashi Sameshima, Takuto Kojima, Koji Arafune, Koichi Kakimoto, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi, Yoshio Ohshita, Atsushi Ogura

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Although crystalline silicon is widely used as substrate material for solar cell, many defects occur during crystal growth. In this study, the generation of crystalline defects in silicon substrates was evaluated. The distributions of small-angle grain boundaries were observed in substrates sliced parallel to the growth direction. Many precipitates consisting of light elemental impurities and small-angle grain boundaries were confirmed to propagate. The precipitates mainly consisted of Si, C, and N atoms. The small-angle grain boundaries were distributed after the precipitation density increased. Then, precipitates appeared at the small-angle grain boundaries. We consider that the origin of the small-angle grain boundaries was lattice mismatch and/or strain caused by the high-density precipitation.

Original languageEnglish
Article number074505
JournalJournal of Applied Physics
Volume111
Issue number7
DOIs
Publication statusPublished - Apr 1 2012

Fingerprint

ingots
casts
seeds
grain boundaries
solar cells
evaluation
defects
silicon
precipitates
crystals
crystal growth
impurities
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells. / Tachibana, Tomihisa; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi.

In: Journal of Applied Physics, Vol. 111, No. 7, 074505, 01.04.2012.

Research output: Contribution to journalArticle

Tachibana, T, Sameshima, T, Kojima, T, Arafune, K, Kakimoto, K, Miyamura, Y, Harada, H, Sekiguchi, T, Ohshita, Y & Ogura, A 2012, 'Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells', Journal of Applied Physics, vol. 111, no. 7, 074505. https://doi.org/10.1063/1.3700250
Tachibana, Tomihisa ; Sameshima, Takashi ; Kojima, Takuto ; Arafune, Koji ; Kakimoto, Koichi ; Miyamura, Yoshiji ; Harada, Hirofumi ; Sekiguchi, Takashi ; Ohshita, Yoshio ; Ogura, Atsushi. / Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells. In: Journal of Applied Physics. 2012 ; Vol. 111, No. 7.
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