Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

Dong Wang; Masaharu Ninomiya; Masahiko Nakamae; Hiroshi Nakashima

Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

Dong Wang, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

Energy Engineering Sciences

Research output: Contribution to conference › Paper › peer-review

Abstract

Interface states intensity (Nss) and minority carrier generation lifetime (τ_g) were evaluated for strained Si (St-Si)/SiGe wafers using deep level transient spectroscopy (DLTS) and Metal-Oxide-Semiconductor (MOS) transient capacitance (C-t) methods. The dependences of Nss and τ _g on St-Si thickness (d_si) and Ge fraction (Ge%) were shown clearly. By the same gate film fabrication and electrical measurements for a bulk Si MOS, the values of Nss and τ_g of St-Si MOS are similar to those of bulk Si MOS, showing good wafer quality.

Original language	English
Pages	2148-2150
Number of pages	3
Publication status	Published - 2004
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: Oct 18 2004 → Oct 21 2004

Other

Other	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/Territory	China
City	Beijing
Period	10/18/04 → 10/21/04

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method. / Wang, Dong; Ninomiya, Masaharu; Nakamae, Masahiko et al.

2004. 2148-2150 Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.

Research output: Contribution to conference › Paper › peer-review

Wang, D, Ninomiya, M, Nakamae, M & Nakashima, H 2004, 'Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method', Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China, 10/18/04 - 10/21/04 pp. 2148-2150.

@conference{9094c84ac6114f1fb3678f62e99a7dcb,

title = "Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method",

abstract = "Interface states intensity (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si)/SiGe wafers using deep level transient spectroscopy (DLTS) and Metal-Oxide-Semiconductor (MOS) transient capacitance (C-t) methods. The dependences of Nss and τ g on St-Si thickness (dsi) and Ge fraction (Ge%) were shown clearly. By the same gate film fabrication and electrical measurements for a bulk Si MOS, the values of Nss and τg of St-Si MOS are similar to those of bulk Si MOS, showing good wafer quality.",

author = "Dong Wang and Masaharu Ninomiya and Masahiko Nakamae and Hiroshi Nakashima",

year = "2004",

language = "English",

pages = "2148--2150",

note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

}

TY - CONF

T1 - Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

AU - Wang, Dong

AU - Ninomiya, Masaharu

AU - Nakamae, Masahiko

AU - Nakashima, Hiroshi

PY - 2004

Y1 - 2004

N2 - Interface states intensity (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si)/SiGe wafers using deep level transient spectroscopy (DLTS) and Metal-Oxide-Semiconductor (MOS) transient capacitance (C-t) methods. The dependences of Nss and τ g on St-Si thickness (dsi) and Ge fraction (Ge%) were shown clearly. By the same gate film fabrication and electrical measurements for a bulk Si MOS, the values of Nss and τg of St-Si MOS are similar to those of bulk Si MOS, showing good wafer quality.

AB - Interface states intensity (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si)/SiGe wafers using deep level transient spectroscopy (DLTS) and Metal-Oxide-Semiconductor (MOS) transient capacitance (C-t) methods. The dependences of Nss and τ g on St-Si thickness (dsi) and Ge fraction (Ge%) were shown clearly. By the same gate film fabrication and electrical measurements for a bulk Si MOS, the values of Nss and τg of St-Si MOS are similar to those of bulk Si MOS, showing good wafer quality.

UR - http://www.scopus.com/inward/record.url?scp=21644471261&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21644471261&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:21644471261

SP - 2148

EP - 2150

T2 - 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

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