Interface states intensity (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si)/SiGe wafers using deep level transient spectroscopy (DLTS) and Metal-Oxide-Semiconductor (MOS) transient capacitance (C-t) methods. The dependences of Nss and τ g on St-Si thickness (dsi) and Ge fraction (Ge%) were shown clearly. By the same gate film fabrication and electrical measurements for a bulk Si MOS, the values of Nss and τg of St-Si MOS are similar to those of bulk Si MOS, showing good wafer quality.
|Number of pages||3|
|Publication status||Published - Dec 1 2004|
|Event||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China|
Duration: Oct 18 2004 → Oct 21 2004
|Other||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004|
|Period||10/18/04 → 10/21/04|
All Science Journal Classification (ASJC) codes