Abstract
Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated in detail for strained Si/SiGe wafers by deep-level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows a nondependence on strained Si thickness (dsi) within a critical thickness and a clear dependence on Ge fraction (Ge%). τg shows a strong dependence on both dsi and Ge%. The reasons for these dependences are discussed in detail.
| Original language | English |
|---|---|
| Pages (from-to) | 2390-2394 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 44 |
| Issue number | 4 B |
| DOIs | |
| Publication status | Published - Apr 2005 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Evaluation of interface states density and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method. / Wang, Dong; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 B, 04.2005, p. 2390-2394.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Evaluation of interface states density and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method
AU - Wang, Dong
AU - Ninomiya, Masaharu
AU - Nakamae, Masahiko
AU - Nakashima, Hiroshi
PY - 2005/4
Y1 - 2005/4
N2 - Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated in detail for strained Si/SiGe wafers by deep-level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows a nondependence on strained Si thickness (dsi) within a critical thickness and a clear dependence on Ge fraction (Ge%). τg shows a strong dependence on both dsi and Ge%. The reasons for these dependences are discussed in detail.
AB - Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated in detail for strained Si/SiGe wafers by deep-level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows a nondependence on strained Si thickness (dsi) within a critical thickness and a clear dependence on Ge fraction (Ge%). τg shows a strong dependence on both dsi and Ge%. The reasons for these dependences are discussed in detail.
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U2 - 10.1143/JJAP.44.2390
DO - 10.1143/JJAP.44.2390
M3 - Article
AN - SCOPUS:21244504243
VL - 44
SP - 2390
EP - 2394
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -