Evaluation of interface states density and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

Dong Wang; Masaharu Ninomiya; Masahiko Nakamae; Hiroshi Nakashima

doi:10.1143/JJAP.44.2390

Evaluation of interface states density and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

Dong Wang, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

Energy Engineering Sciences

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Interface states density (N_ss) and minority carrier generation lifetime (τ_g) were evaluated in detail for strained Si/SiGe wafers by deep-level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. N_ss shows a nondependence on strained Si thickness (d_si) within a critical thickness and a clear dependence on Ge fraction (Ge%). τ_g shows a strong dependence on both d_si and Ge%. The reasons for these dependences are discussed in detail.

Original language	English
Pages (from-to)	2390-2394
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.44.2390
Publication status	Published - Apr 2005

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.44.2390

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Evaluation of interface states density and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method. / Wang, Dong; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 B, 04.2005, p. 2390-2394.

Research output: Contribution to journal › Article › peer-review

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