Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated in detail for strained Si/SiGe wafers by deep-level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows a nondependence on strained Si thickness (dsi) within a critical thickness and a clear dependence on Ge fraction (Ge%). τg shows a strong dependence on both dsi and Ge%. The reasons for these dependences are discussed in detail.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - Apr 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)