Evaluation of interface states density and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

Dong Wang, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated in detail for strained Si/SiGe wafers by deep-level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows a nondependence on strained Si thickness (dsi) within a critical thickness and a clear dependence on Ge fraction (Ge%). τg shows a strong dependence on both dsi and Ge%. The reasons for these dependences are discussed in detail.

Original languageEnglish
Pages (from-to)2390-2394
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
Publication statusPublished - Apr 2005

Fingerprint

Deep level transient spectroscopy
Interface states
minority carriers
Capacitance
capacitance
wafers
life (durability)
evaluation
Metals
metal oxide semiconductors
spectroscopy
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated in detail for strained Si/SiGe wafers by deep-level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows a nondependence on strained Si thickness (dsi) within a critical thickness and a clear dependence on Ge fraction (Ge{\%}). τg shows a strong dependence on both dsi and Ge{\%}. The reasons for these dependences are discussed in detail.",
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AU - Ninomiya, Masaharu

AU - Nakamae, Masahiko

AU - Nakashima, Hiroshi

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N2 - Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated in detail for strained Si/SiGe wafers by deep-level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows a nondependence on strained Si thickness (dsi) within a critical thickness and a clear dependence on Ge fraction (Ge%). τg shows a strong dependence on both dsi and Ge%. The reasons for these dependences are discussed in detail.

AB - Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated in detail for strained Si/SiGe wafers by deep-level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows a nondependence on strained Si thickness (dsi) within a critical thickness and a clear dependence on Ge fraction (Ge%). τg shows a strong dependence on both dsi and Ge%. The reasons for these dependences are discussed in detail.

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