Evaluation of Ph precursors for liquid injection atomic layer deposition of Pb(ZrxTii.x)O3 thin films

Takayuki Watanabe, Susanne Hoffmann-Eifert, Cheol Seong Hwang, Rainer Wase

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Pbi(DPM)2 and Pb(TMOD)2: dissolved in ethylcyclohexane were evaluated as precursors for future atomic layer deposition (ALD) of Pb(Zr,Ti)O3 films. PbO films were deposited by a liquid injection atomic layer deposition on Pt-covered Si substrates at different deposition temperature and precursor volume per cycle. Pb(DPM)2: and Pb(TMOD)2 started thermal decomposition at deposition temperature of around 270°C and 320°C, respectively. Against increasing Pb(DPM) 2 injection at 240°C, the deposition rate of PbO films saturated at around 1 A/cycle, but kept increasiiig at 300°C, which is. above the thermal decomposition temperature. The deposition rate of PbO films at 240°C dropped to a constant value with enough purge time after precursor injection and reactant supply. A saturated deposition rate of PbO films was also observed for Pb(TMC)D)2 below the thermal decomposition temperature. However, the saturation behavior observed for Pb(TMOD)2 was slower and the saturated growth rate was higher comparing to Pb(DPM)j. In addition, the film thickness of the PbO films had an apparent gradient over the substrates. These results indicate that Pb(DPM)2 shows more reactive and stable chemisorption comparing to Pb(TMOD)2 for the self-limiting growth rate.

Original languageEnglish
Title of host publicationFerroelectric Thin Films XIII
Pages135-140
Number of pages6
Volume902
Publication statusPublished - 2005
Externally publishedYes
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Other

Other2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/2/05

Fingerprint

Atomic layer deposition
Thin films
Liquids
Deposition rates
Pyrolysis
Temperature
Substrates
Chemisorption
Film thickness

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Watanabe, T., Hoffmann-Eifert, S., Hwang, C. S., & Wase, R. (2005). Evaluation of Ph precursors for liquid injection atomic layer deposition of Pb(ZrxTii.x)O3 thin films. In Ferroelectric Thin Films XIII (Vol. 902, pp. 135-140)

Evaluation of Ph precursors for liquid injection atomic layer deposition of Pb(ZrxTii.x)O3 thin films. / Watanabe, Takayuki; Hoffmann-Eifert, Susanne; Hwang, Cheol Seong; Wase, Rainer.

Ferroelectric Thin Films XIII. Vol. 902 2005. p. 135-140.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Watanabe, T, Hoffmann-Eifert, S, Hwang, CS & Wase, R 2005, Evaluation of Ph precursors for liquid injection atomic layer deposition of Pb(ZrxTii.x)O3 thin films. in Ferroelectric Thin Films XIII. vol. 902, pp. 135-140, 2005 MRS Fall Meeting, Boston, MA, United States, 11/28/05.
Watanabe T, Hoffmann-Eifert S, Hwang CS, Wase R. Evaluation of Ph precursors for liquid injection atomic layer deposition of Pb(ZrxTii.x)O3 thin films. In Ferroelectric Thin Films XIII. Vol. 902. 2005. p. 135-140
Watanabe, Takayuki ; Hoffmann-Eifert, Susanne ; Hwang, Cheol Seong ; Wase, Rainer. / Evaluation of Ph precursors for liquid injection atomic layer deposition of Pb(ZrxTii.x)O3 thin films. Ferroelectric Thin Films XIII. Vol. 902 2005. pp. 135-140
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AB - Pbi(DPM)2 and Pb(TMOD)2: dissolved in ethylcyclohexane were evaluated as precursors for future atomic layer deposition (ALD) of Pb(Zr,Ti)O3 films. PbO films were deposited by a liquid injection atomic layer deposition on Pt-covered Si substrates at different deposition temperature and precursor volume per cycle. Pb(DPM)2: and Pb(TMOD)2 started thermal decomposition at deposition temperature of around 270°C and 320°C, respectively. Against increasing Pb(DPM) 2 injection at 240°C, the deposition rate of PbO films saturated at around 1 A/cycle, but kept increasiiig at 300°C, which is. above the thermal decomposition temperature. The deposition rate of PbO films at 240°C dropped to a constant value with enough purge time after precursor injection and reactant supply. A saturated deposition rate of PbO films was also observed for Pb(TMC)D)2 below the thermal decomposition temperature. However, the saturation behavior observed for Pb(TMOD)2 was slower and the saturated growth rate was higher comparing to Pb(DPM)j. In addition, the film thickness of the PbO films had an apparent gradient over the substrates. These results indicate that Pb(DPM)2 shows more reactive and stable chemisorption comparing to Pb(TMOD)2 for the self-limiting growth rate.

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