Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions

Mahmoud Shaban, Amr M. Bayoumi, Doaa Farouk, Mohamed B. Saleh, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticle

    Abstract

    In this paper, an application of nanocrystalline iron disilicide (NC-FeSi2) combined with nanocrystalline-Si (NC-Si) in a heterostructured solar cell is introduced and numerically evaluated in detail. The proposed cell structure is studied based on an experimental investigation of photovoltaic properties of NC-FeSi2/crystalline-Si heterojunctions, composed of unintentionally-doped NC-FeSi2 thin film grown on Si substrate. Photoresponse measurement of NC-FeSi2/crystalline-Si heterojunction confirmed ability of NC-FeSi2 to absorb NIR light and to generate photocarriers. However, collection of these carriers was not so efficient and a radical improvement in design of the device is required. Therefore, a modified device structure, comprising of NC-FeSi2 layer sandwiched between two heavily-doped p- and n-type NC-Si, is suggested and numerically evaluated. Simulation results showed that the proposed structure would exhibit a relatively high conversion efficiency of 25%, due to an improvement in collection efficiency of photogenerated carriers in the NC-FeSi2 and NC-Si layers. To attain such efficiency, defect densities in NC-FeSi2 and NC-Si layers should be kept less than 1014 and 1016 cm−3 eV−1, respectively. Remarkable optical and electrical properties of NC-FeSi2, employed in the proposed structure, facilitate improving device quantum efficiency spectrum providing significant spectrum extension into the near-infrared region beyond Si bandgap.

    Original languageEnglish
    Pages (from-to)111-118
    Number of pages8
    JournalSolid-State Electronics
    Volume123
    DOIs
    Publication statusPublished - Sep 1 2016

    Fingerprint

    Heterojunctions
    heterojunctions
    Crystalline materials
    evaluation
    Defect density
    Quantum efficiency
    Conversion efficiency
    Solar cells
    Electric properties
    Energy gap
    Iron
    Optical properties
    Infrared radiation
    Thin films
    quantum efficiency
    Substrates
    solar cells
    electrical properties
    optical properties
    iron

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Cite this

    Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions. / Shaban, Mahmoud; Bayoumi, Amr M.; Farouk, Doaa; Saleh, Mohamed B.; Yoshitake, Tsuyoshi.

    In: Solid-State Electronics, Vol. 123, 01.09.2016, p. 111-118.

    Research output: Contribution to journalArticle

    Shaban, Mahmoud ; Bayoumi, Amr M. ; Farouk, Doaa ; Saleh, Mohamed B. ; Yoshitake, Tsuyoshi. / Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions. In: Solid-State Electronics. 2016 ; Vol. 123. pp. 111-118.
    @article{4d79def8b7ce4b3fbff8451f3dc2bc8c,
    title = "Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions",
    abstract = "In this paper, an application of nanocrystalline iron disilicide (NC-FeSi2) combined with nanocrystalline-Si (NC-Si) in a heterostructured solar cell is introduced and numerically evaluated in detail. The proposed cell structure is studied based on an experimental investigation of photovoltaic properties of NC-FeSi2/crystalline-Si heterojunctions, composed of unintentionally-doped NC-FeSi2 thin film grown on Si substrate. Photoresponse measurement of NC-FeSi2/crystalline-Si heterojunction confirmed ability of NC-FeSi2 to absorb NIR light and to generate photocarriers. However, collection of these carriers was not so efficient and a radical improvement in design of the device is required. Therefore, a modified device structure, comprising of NC-FeSi2 layer sandwiched between two heavily-doped p- and n-type NC-Si, is suggested and numerically evaluated. Simulation results showed that the proposed structure would exhibit a relatively high conversion efficiency of 25{\%}, due to an improvement in collection efficiency of photogenerated carriers in the NC-FeSi2 and NC-Si layers. To attain such efficiency, defect densities in NC-FeSi2 and NC-Si layers should be kept less than 1014 and 1016 cm−3 eV−1, respectively. Remarkable optical and electrical properties of NC-FeSi2, employed in the proposed structure, facilitate improving device quantum efficiency spectrum providing significant spectrum extension into the near-infrared region beyond Si bandgap.",
    author = "Mahmoud Shaban and Bayoumi, {Amr M.} and Doaa Farouk and Saleh, {Mohamed B.} and Tsuyoshi Yoshitake",
    year = "2016",
    month = "9",
    day = "1",
    doi = "10.1016/j.sse.2016.05.006",
    language = "English",
    volume = "123",
    pages = "111--118",
    journal = "Solid-State Electronics",
    issn = "0038-1101",
    publisher = "Elsevier Limited",

    }

    TY - JOUR

    T1 - Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions

    AU - Shaban, Mahmoud

    AU - Bayoumi, Amr M.

    AU - Farouk, Doaa

    AU - Saleh, Mohamed B.

    AU - Yoshitake, Tsuyoshi

    PY - 2016/9/1

    Y1 - 2016/9/1

    N2 - In this paper, an application of nanocrystalline iron disilicide (NC-FeSi2) combined with nanocrystalline-Si (NC-Si) in a heterostructured solar cell is introduced and numerically evaluated in detail. The proposed cell structure is studied based on an experimental investigation of photovoltaic properties of NC-FeSi2/crystalline-Si heterojunctions, composed of unintentionally-doped NC-FeSi2 thin film grown on Si substrate. Photoresponse measurement of NC-FeSi2/crystalline-Si heterojunction confirmed ability of NC-FeSi2 to absorb NIR light and to generate photocarriers. However, collection of these carriers was not so efficient and a radical improvement in design of the device is required. Therefore, a modified device structure, comprising of NC-FeSi2 layer sandwiched between two heavily-doped p- and n-type NC-Si, is suggested and numerically evaluated. Simulation results showed that the proposed structure would exhibit a relatively high conversion efficiency of 25%, due to an improvement in collection efficiency of photogenerated carriers in the NC-FeSi2 and NC-Si layers. To attain such efficiency, defect densities in NC-FeSi2 and NC-Si layers should be kept less than 1014 and 1016 cm−3 eV−1, respectively. Remarkable optical and electrical properties of NC-FeSi2, employed in the proposed structure, facilitate improving device quantum efficiency spectrum providing significant spectrum extension into the near-infrared region beyond Si bandgap.

    AB - In this paper, an application of nanocrystalline iron disilicide (NC-FeSi2) combined with nanocrystalline-Si (NC-Si) in a heterostructured solar cell is introduced and numerically evaluated in detail. The proposed cell structure is studied based on an experimental investigation of photovoltaic properties of NC-FeSi2/crystalline-Si heterojunctions, composed of unintentionally-doped NC-FeSi2 thin film grown on Si substrate. Photoresponse measurement of NC-FeSi2/crystalline-Si heterojunction confirmed ability of NC-FeSi2 to absorb NIR light and to generate photocarriers. However, collection of these carriers was not so efficient and a radical improvement in design of the device is required. Therefore, a modified device structure, comprising of NC-FeSi2 layer sandwiched between two heavily-doped p- and n-type NC-Si, is suggested and numerically evaluated. Simulation results showed that the proposed structure would exhibit a relatively high conversion efficiency of 25%, due to an improvement in collection efficiency of photogenerated carriers in the NC-FeSi2 and NC-Si layers. To attain such efficiency, defect densities in NC-FeSi2 and NC-Si layers should be kept less than 1014 and 1016 cm−3 eV−1, respectively. Remarkable optical and electrical properties of NC-FeSi2, employed in the proposed structure, facilitate improving device quantum efficiency spectrum providing significant spectrum extension into the near-infrared region beyond Si bandgap.

    UR - http://www.scopus.com/inward/record.url?scp=84969718565&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84969718565&partnerID=8YFLogxK

    U2 - 10.1016/j.sse.2016.05.006

    DO - 10.1016/j.sse.2016.05.006

    M3 - Article

    AN - SCOPUS:84969718565

    VL - 123

    SP - 111

    EP - 118

    JO - Solid-State Electronics

    JF - Solid-State Electronics

    SN - 0038-1101

    ER -