Evaluation of residual strain in directional solidified mono-Si ingots

Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Cast-grown mono-like Si ingots for photovoltaic application are getting increasing attention due to the possibility of obtaining highly efficient solar cells at a low-cost production process. The reduction of crystallographic defects is essential to reach that potential. In this study, the residual strain and dislocation distribution in monolike ingots grown by directional solidification was experimentally determined. It was found that both strain and dislocations are mainly concentrated in the periphery of the ingots

Original languageEnglish
Pages (from-to)141-145
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume10
Issue number1
DOIs
Publication statusPublished - Jan 1 2013

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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