Evaluation of sensor property for hydrogen and ethanol of zinc-doped tin-dioxide thin films fabricated by RF sputtering

Isao Sakaguchi; Noriko Saito; Ken Watanabe; Yutaka Adachi; Taku T. Suzuki

doi:10.2109/jcersj2.16015

Evaluation of sensor property for hydrogen and ethanol of zinc-doped tin-dioxide thin films fabricated by RF sputtering

Isao Sakaguchi, Noriko Saito, Ken Watanabe, Yutaka Adachi, Taku T. Suzuki

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Zinc-doped Tin-dioxide thin (SnO₂) films were synthesized on c-alumina substrates by radio-frequency (rf ) sputtering. To fabricate zinc-doped SnO₂ thin films with different concentrations of zinc, an insulating zinc-doped SnO₂ target was placed on a conductive non-doped target. Thin films were then deposited at different flow rates of argon gas. Zinc concentration in the deposited SnO₂ thin films increased with increasing flow rate of argon gas. Moreover, the SnO₂ thin film with a zinc concentration of 2.2 × 10¹⁹/cm³ showed the highest gas-sensor response. It is concluded that this rf-sputtering growth method is a useful tool for identifying suitable materials compositions for creating gas sensor with response for hydrogen and ethanol.

Original language	English
Pages (from-to)	714-716
Number of pages	3
Journal	Journal of the Ceramic Society of Japan
Volume	124
Issue number	6
DOIs	https://doi.org/10.2109/jcersj2.16015
Publication status	Published - Jun 2016
Externally published	Yes

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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title = "Evaluation of sensor property for hydrogen and ethanol of zinc-doped tin-dioxide thin films fabricated by RF sputtering",

abstract = "Zinc-doped Tin-dioxide thin (SnO2) films were synthesized on c-alumina substrates by radio-frequency (rf ) sputtering. To fabricate zinc-doped SnO2 thin films with different concentrations of zinc, an insulating zinc-doped SnO2 target was placed on a conductive non-doped target. Thin films were then deposited at different flow rates of argon gas. Zinc concentration in the deposited SnO2 thin films increased with increasing flow rate of argon gas. Moreover, the SnO2 thin film with a zinc concentration of 2.2 × 1019/cm3 showed the highest gas-sensor response. It is concluded that this rf-sputtering growth method is a useful tool for identifying suitable materials compositions for creating gas sensor with response for hydrogen and ethanol.",

author = "Isao Sakaguchi and Noriko Saito and Ken Watanabe and Yutaka Adachi and Suzuki, {Taku T.}",

year = "2016",

month = jun,

doi = "10.2109/jcersj2.16015",

language = "English",

volume = "124",

pages = "714--716",

journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",

issn = "1882-0743",

publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",

number = "6",

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T1 - Evaluation of sensor property for hydrogen and ethanol of zinc-doped tin-dioxide thin films fabricated by RF sputtering

AU - Sakaguchi, Isao

AU - Saito, Noriko

AU - Watanabe, Ken

AU - Adachi, Yutaka

AU - Suzuki, Taku T.

PY - 2016/6

Y1 - 2016/6

N2 - Zinc-doped Tin-dioxide thin (SnO2) films were synthesized on c-alumina substrates by radio-frequency (rf ) sputtering. To fabricate zinc-doped SnO2 thin films with different concentrations of zinc, an insulating zinc-doped SnO2 target was placed on a conductive non-doped target. Thin films were then deposited at different flow rates of argon gas. Zinc concentration in the deposited SnO2 thin films increased with increasing flow rate of argon gas. Moreover, the SnO2 thin film with a zinc concentration of 2.2 × 1019/cm3 showed the highest gas-sensor response. It is concluded that this rf-sputtering growth method is a useful tool for identifying suitable materials compositions for creating gas sensor with response for hydrogen and ethanol.

AB - Zinc-doped Tin-dioxide thin (SnO2) films were synthesized on c-alumina substrates by radio-frequency (rf ) sputtering. To fabricate zinc-doped SnO2 thin films with different concentrations of zinc, an insulating zinc-doped SnO2 target was placed on a conductive non-doped target. Thin films were then deposited at different flow rates of argon gas. Zinc concentration in the deposited SnO2 thin films increased with increasing flow rate of argon gas. Moreover, the SnO2 thin film with a zinc concentration of 2.2 × 1019/cm3 showed the highest gas-sensor response. It is concluded that this rf-sputtering growth method is a useful tool for identifying suitable materials compositions for creating gas sensor with response for hydrogen and ethanol.

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