Evaluation of sic­mosfet by repetitive uis tests for solid state circuit breaker

Mitsuhiko Sagara, Keiji Wada, Shin­Ichi Nishizawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper investigates a degradation of SiC power device for DC circuit breaker through repetitive unclamped inductive switching (UIS) tests. Being lower ON­resistance compared with Si devices, it has been considered an application for DC circuit breakers using SiC semiconductor. In order to use for the DC breaker, it is essential to evaluate the destructive endurance for UIS test. This paper evaluates a deterioration phenomenon by paying attention to the decrease of the gate voltage of the SiC­MOSFETs under the degradation at repetitive UIS test.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2019
EditorsHiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka
PublisherTrans Tech Publications Ltd
Pages1010-1015
Number of pages6
ISBN (Print)9783035715798
DOIs
Publication statusPublished - 2020
Event18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 - Kyoto, Japan
Duration: Sep 29 2019Oct 4 2019

Publication series

NameMaterials Science Forum
Volume1004 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019
CountryJapan
CityKyoto
Period9/29/1910/4/19

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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