Evaluation of zinc self-diffusion at the interface between homoepitaxial ZnO thin films and (0001) ZnO substrates

Ken Watanabe, Kenji Matsumoto, Yutaka Adachi, Takeshi Ohgaki, Tsubasa Nakagawa, Naoki Ohashi, Hajime Haneda, Isao Sakaguchi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Isotopic ZnO thin films were deposited on the c-plane of ZnO single crystals by pulsed laser deposition. The isotopic abundance of Zn in the films was determined with a secondary ion mass spectrometry before and after the films was diffusion annealed. The diffusion profiles across the film/substrate interface behaved smooth features. The zinc diffusion coefficient (D Zn) was obtained by analyzing the slope of the profile in the annealed sample. The temperature dependence of D Zn was determined to be D Zn(cm 2/s)=8.0×10 4exp(-417[kJ/mol])/ RT, where R and T are gas constant and temperature. The zinc ion diffusion coefficients were of the same order as that in a ZnO single crystal. A comparison of the experimental and theoretical values indicated that the zinc ions diffused in the thin film and the single crystal through a vacancy mechanism.

Original languageEnglish
Pages (from-to)1917-1920
Number of pages4
JournalSolid State Communications
Volume152
Issue number20
DOIs
Publication statusPublished - Oct 2012

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Evaluation of zinc self-diffusion at the interface between homoepitaxial ZnO thin films and (0001) ZnO substrates'. Together they form a unique fingerprint.

  • Cite this