TY - JOUR
T1 - Evaluation on microstructure and dissolution behavior of SiC-AIN composites fabricated by SPS process
AU - Shirouzu, Keita
AU - Ohkusa, Takahiro
AU - Kawamoto, Tohru
AU - Enomoto, Naoya
AU - Hojo, Junichi
PY - 2008/1/1
Y1 - 2008/1/1
N2 - High-density SiC-AlN composites (50:50 in mol) were fabricated from powder mixtures of SiC and AlN by SPS process in the temperature range of 1800-2100°C. Relative densities of the composites increased with increasing firing temperature. It revealed that the mixed phases of 3C and 2H formed at 1800°C, 1900°C and 2000°C, and only 2H phase formed at 2050°C and 2100°C. The sintering of SiC and AlN particles proceeded hardly at 1800°C. The densely sintered SiC-AlN composites were obtained above 1900°C. At 1900°C and 2000°C, 3Css (β-SiC/AlN solid solution) and 2Hss (α-SiC/AlN solid solution) were found, in which Si-rich 2Hss and Al-rich 2Hss existed at 2000°C. Homogeneous SiC-AlN composites were obtained with graingrowth at 2100°C.
AB - High-density SiC-AlN composites (50:50 in mol) were fabricated from powder mixtures of SiC and AlN by SPS process in the temperature range of 1800-2100°C. Relative densities of the composites increased with increasing firing temperature. It revealed that the mixed phases of 3C and 2H formed at 1800°C, 1900°C and 2000°C, and only 2H phase formed at 2050°C and 2100°C. The sintering of SiC and AlN particles proceeded hardly at 1800°C. The densely sintered SiC-AlN composites were obtained above 1900°C. At 1900°C and 2000°C, 3Css (β-SiC/AlN solid solution) and 2Hss (α-SiC/AlN solid solution) were found, in which Si-rich 2Hss and Al-rich 2Hss existed at 2000°C. Homogeneous SiC-AlN composites were obtained with graingrowth at 2100°C.
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U2 - 10.2109/jcersj2.116.781
DO - 10.2109/jcersj2.116.781
M3 - Article
AN - SCOPUS:46749122306
VL - 116
SP - 781
EP - 785
JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
SN - 1882-0743
IS - 1355
ER -