TY - JOUR
T1 - Evolution of the memory effect of the current through ferroelectric p/p and p/n heterostructures
AU - Watanabe, Y.
AU - Sawamura, D.
AU - Okano, M.
N1 - Funding Information:
This work was performed through the support of a Grant-in-aid for Scientific Research from the Ministry of Education, Science and Sports and the Ogasawara Foundation.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1998/5/1
Y1 - 1998/5/1
N2 - Diode effects in BaTiO3XLa2CuO4, BaTiO3/SrTiO3:Nb (Nb-doped SrTiO3), (Pb,La)(Zr,Ti)O3/Nd2CuO4, and Pb(Zr,Ti)O3/LaNiO3 heterostructures are reported. La2CuO4 and LaNiO3 are p-type (hole conduction-type) semicon-ductors, and SrTiO3:Nb and Nd2CuO4 are n-type (electron conduction-type). The heterostructures were epitaxially grown to form pp, nn, and pn heterojunctions. At low applied bias, the leakage current through the heterostructures was symmetric with regard to bias polarity. With increasing applied bias, it became asymmetric and exhibited a reproducible memory effect at a forward bias. This behavior was observed for many combinations of ferroelectrics and perovskite semiconductors. A model is presented to explain the polarity of the current characteristics and its temperature dependence.
AB - Diode effects in BaTiO3XLa2CuO4, BaTiO3/SrTiO3:Nb (Nb-doped SrTiO3), (Pb,La)(Zr,Ti)O3/Nd2CuO4, and Pb(Zr,Ti)O3/LaNiO3 heterostructures are reported. La2CuO4 and LaNiO3 are p-type (hole conduction-type) semicon-ductors, and SrTiO3:Nb and Nd2CuO4 are n-type (electron conduction-type). The heterostructures were epitaxially grown to form pp, nn, and pn heterojunctions. At low applied bias, the leakage current through the heterostructures was symmetric with regard to bias polarity. With increasing applied bias, it became asymmetric and exhibited a reproducible memory effect at a forward bias. This behavior was observed for many combinations of ferroelectrics and perovskite semiconductors. A model is presented to explain the polarity of the current characteristics and its temperature dependence.
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U2 - 10.1016/s0167-2738(98)00027-7
DO - 10.1016/s0167-2738(98)00027-7
M3 - Article
AN - SCOPUS:0032070569
VL - 108
SP - 109
EP - 115
JO - Solid State Ionics
JF - Solid State Ionics
SN - 0167-2738
IS - 1-4
ER -