Evolution of the memory effect of the current through ferroelectric p/p and p/n heterostructures

Y. Watanabe; D. Sawamura; M. Okano

doi:10.1016/s0167-2738(98)00027-7

Evolution of the memory effect of the current through ferroelectric p/p and p/n heterostructures

Y. Watanabe, D. Sawamura, M. Okano

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Diode effects in BaTiO₃XLa₂CuO₄, BaTiO₃/SrTiO₃:Nb (Nb-doped SrTiO₃), (Pb,La)(Zr,Ti)O₃/Nd₂CuO₄, and Pb(Zr,Ti)O₃/LaNiO₃ heterostructures are reported. La₂CuO₄ and LaNiO₃ are p-type (hole conduction-type) semicon-ductors, and SrTiO₃:Nb and Nd₂CuO₄ are n-type (electron conduction-type). The heterostructures were epitaxially grown to form pp, nn, and pn heterojunctions. At low applied bias, the leakage current through the heterostructures was symmetric with regard to bias polarity. With increasing applied bias, it became asymmetric and exhibited a reproducible memory effect at a forward bias. This behavior was observed for many combinations of ferroelectrics and perovskite semiconductors. A model is presented to explain the polarity of the current characteristics and its temperature dependence.

Original language	English
Pages (from-to)	109-115
Number of pages	7
Journal	Solid State Ionics
Volume	108
Issue number	1-4
DOIs	https://doi.org/10.1016/s0167-2738(98)00027-7
Publication status	Published - May 1 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1016/s0167-2738(98)00027-7

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@article{a32881f4551d429ab9d84e350390a77e,

title = "Evolution of the memory effect of the current through ferroelectric p/p and p/n heterostructures",

abstract = "Diode effects in BaTiO3XLa2CuO4, BaTiO3/SrTiO3:Nb (Nb-doped SrTiO3), (Pb,La)(Zr,Ti)O3/Nd2CuO4, and Pb(Zr,Ti)O3/LaNiO3 heterostructures are reported. La2CuO4 and LaNiO3 are p-type (hole conduction-type) semicon-ductors, and SrTiO3:Nb and Nd2CuO4 are n-type (electron conduction-type). The heterostructures were epitaxially grown to form pp, nn, and pn heterojunctions. At low applied bias, the leakage current through the heterostructures was symmetric with regard to bias polarity. With increasing applied bias, it became asymmetric and exhibited a reproducible memory effect at a forward bias. This behavior was observed for many combinations of ferroelectrics and perovskite semiconductors. A model is presented to explain the polarity of the current characteristics and its temperature dependence.",

author = "Y. Watanabe and D. Sawamura and M. Okano",

note = "Funding Information: This work was performed through the support of a Grant-in-aid for Scientific Research from the Ministry of Education, Science and Sports and the Ogasawara Foundation. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "1998",

month = may,

day = "1",

doi = "10.1016/s0167-2738(98)00027-7",

language = "English",

volume = "108",

pages = "109--115",

journal = "Solid State Ionics",

issn = "0167-2738",

publisher = "Elsevier",

number = "1-4",

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TY - JOUR

T1 - Evolution of the memory effect of the current through ferroelectric p/p and p/n heterostructures

AU - Watanabe, Y.

AU - Sawamura, D.

AU - Okano, M.

N1 - Funding Information: This work was performed through the support of a Grant-in-aid for Scientific Research from the Ministry of Education, Science and Sports and the Ogasawara Foundation. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 1998/5/1

Y1 - 1998/5/1

N2 - Diode effects in BaTiO3XLa2CuO4, BaTiO3/SrTiO3:Nb (Nb-doped SrTiO3), (Pb,La)(Zr,Ti)O3/Nd2CuO4, and Pb(Zr,Ti)O3/LaNiO3 heterostructures are reported. La2CuO4 and LaNiO3 are p-type (hole conduction-type) semicon-ductors, and SrTiO3:Nb and Nd2CuO4 are n-type (electron conduction-type). The heterostructures were epitaxially grown to form pp, nn, and pn heterojunctions. At low applied bias, the leakage current through the heterostructures was symmetric with regard to bias polarity. With increasing applied bias, it became asymmetric and exhibited a reproducible memory effect at a forward bias. This behavior was observed for many combinations of ferroelectrics and perovskite semiconductors. A model is presented to explain the polarity of the current characteristics and its temperature dependence.

AB - Diode effects in BaTiO3XLa2CuO4, BaTiO3/SrTiO3:Nb (Nb-doped SrTiO3), (Pb,La)(Zr,Ti)O3/Nd2CuO4, and Pb(Zr,Ti)O3/LaNiO3 heterostructures are reported. La2CuO4 and LaNiO3 are p-type (hole conduction-type) semicon-ductors, and SrTiO3:Nb and Nd2CuO4 are n-type (electron conduction-type). The heterostructures were epitaxially grown to form pp, nn, and pn heterojunctions. At low applied bias, the leakage current through the heterostructures was symmetric with regard to bias polarity. With increasing applied bias, it became asymmetric and exhibited a reproducible memory effect at a forward bias. This behavior was observed for many combinations of ferroelectrics and perovskite semiconductors. A model is presented to explain the polarity of the current characteristics and its temperature dependence.

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DO - 10.1016/s0167-2738(98)00027-7

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VL - 108

SP - 109

EP - 115

JO - Solid State Ionics

JF - Solid State Ionics

SN - 0167-2738

IS - 1-4

ER -

Evolution of the memory effect of the current through ferroelectric p/p and p/n heterostructures

Abstract

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