Evolution of the memory effect of the current through ferroelectric p/p and p/n heterostructures

Y. Watanabe, D. Sawamura, M. Okano

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Diode effects in BaTiO3XLa2CuO4, BaTiO3/SrTiO3:Nb (Nb-doped SrTiO3), (Pb,La)(Zr,Ti)O3/Nd2CuO4, and Pb(Zr,Ti)O3/LaNiO3 heterostructures are reported. La2CuO4 and LaNiO3 are p-type (hole conduction-type) semicon-ductors, and SrTiO3:Nb and Nd2CuO4 are n-type (electron conduction-type). The heterostructures were epitaxially grown to form pp, nn, and pn heterojunctions. At low applied bias, the leakage current through the heterostructures was symmetric with regard to bias polarity. With increasing applied bias, it became asymmetric and exhibited a reproducible memory effect at a forward bias. This behavior was observed for many combinations of ferroelectrics and perovskite semiconductors. A model is presented to explain the polarity of the current characteristics and its temperature dependence.

Original languageEnglish
Pages (from-to)109-115
Number of pages7
JournalSolid State Ionics
Volume108
Issue number1-4
Publication statusPublished - May 1 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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