Excimer laser crystallization processes of amorphous silicon thin films by using molecular-dynamics simulations

Shinji Munetoh, Xiao Yan Ping, Tomohiko Ogata, Teruaki Motooka, Ryo Teranishi

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    Crystallization processes of amorphous Si during the excimer laser annealing in the complete-melting and near-complete-melting conditions have been investigated by using molecular-dynamics simulations. The initial amorphous Si MD cell was prepared by quenching a liquid Si layer with 18 666 atoms. KrF excimer laser annealing processes of amorphous Si were calculated by taking account of the change in the optical constant upon melting during a Gaussian-shape laser pulse shot with full width at half maximum (FWHM) of 25 ns. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for 160 and 180 mJ/cm2 fluence, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that the nucleation occur from unmelted amorphous Si region during laser irradiation and crystal growth proceeds toward supercooled /-Si region in the near-complete-melting condition.

    Original languageEnglish
    Pages (from-to)1925-1928
    Number of pages4
    Journalisij international
    Volume50
    Issue number12
    DOIs
    Publication statusPublished - 2010

    All Science Journal Classification (ASJC) codes

    • Mechanics of Materials
    • Mechanical Engineering
    • Metals and Alloys
    • Materials Chemistry

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