Exciton quenching behavior of thermally activated delayed fluorescence molecules by charge carriers

Atula S.D. Sandanayaka; Kou Yoshida; Toshinori Matsushima; Chihaya Adachi

doi:10.1021/acs.jpcc.5b01314

Exciton quenching behavior of thermally activated delayed fluorescence molecules by charge carriers

Atula S.D. Sandanayaka, Kou Yoshida, Toshinori Matsushima, Chihaya Adachi

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22 Citations (Scopus)

Abstract

The quenching of singlet excitons by injected charge carriers in molecules that display thermally activated delayed fluorescence (TADF) was investigated using time-resolved transient photoluminescence (PL) techniques. Injected electrons did not affect the excitons; however, injected holes caused significant quenching. Using a rate-equation analysis, the hole-induced exciton quenching rate was determined to be between 10^-11 and 10^-12 cm³ s^-1. Interestingly, the TADF emission component was enhanced in the presence of injected holes, plausibly due to a reduction of the singlet-exciton energy level.

Original language	English
Pages (from-to)	7631-7636
Number of pages	6
Journal	Journal of Physical Chemistry C
Volume	119
Issue number	14
DOIs	https://doi.org/10.1021/acs.jpcc.5b01314
Publication status	Published - Apr 9 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/acs.jpcc.5b01314

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title = "Exciton quenching behavior of thermally activated delayed fluorescence molecules by charge carriers",

abstract = "The quenching of singlet excitons by injected charge carriers in molecules that display thermally activated delayed fluorescence (TADF) was investigated using time-resolved transient photoluminescence (PL) techniques. Injected electrons did not affect the excitons; however, injected holes caused significant quenching. Using a rate-equation analysis, the hole-induced exciton quenching rate was determined to be between 10-11 and 10-12 cm3 s-1. Interestingly, the TADF emission component was enhanced in the presence of injected holes, plausibly due to a reduction of the singlet-exciton energy level.",

author = "Sandanayaka, {Atula S.D.} and Kou Yoshida and Toshinori Matsushima and Chihaya Adachi",

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T1 - Exciton quenching behavior of thermally activated delayed fluorescence molecules by charge carriers

AU - Sandanayaka, Atula S.D.

AU - Yoshida, Kou

AU - Matsushima, Toshinori

AU - Adachi, Chihaya

PY - 2015/4/9

Y1 - 2015/4/9

N2 - The quenching of singlet excitons by injected charge carriers in molecules that display thermally activated delayed fluorescence (TADF) was investigated using time-resolved transient photoluminescence (PL) techniques. Injected electrons did not affect the excitons; however, injected holes caused significant quenching. Using a rate-equation analysis, the hole-induced exciton quenching rate was determined to be between 10-11 and 10-12 cm3 s-1. Interestingly, the TADF emission component was enhanced in the presence of injected holes, plausibly due to a reduction of the singlet-exciton energy level.

AB - The quenching of singlet excitons by injected charge carriers in molecules that display thermally activated delayed fluorescence (TADF) was investigated using time-resolved transient photoluminescence (PL) techniques. Injected electrons did not affect the excitons; however, injected holes caused significant quenching. Using a rate-equation analysis, the hole-induced exciton quenching rate was determined to be between 10-11 and 10-12 cm3 s-1. Interestingly, the TADF emission component was enhanced in the presence of injected holes, plausibly due to a reduction of the singlet-exciton energy level.

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EP - 7636

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 14

ER -

Exciton quenching behavior of thermally activated delayed fluorescence molecules by charge carriers

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