Exciton quenching behavior of thermally activated delayed fluorescence molecules by charge carriers

Atula S D Sandanayaka, Kou Yoshida, Toshinori Matsusima, Chihaya Adachi

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13 Citations (Scopus)

Abstract

The quenching of singlet excitons by injected charge carriers in molecules that display thermally activated delayed fluorescence (TADF) was investigated using time-resolved transient photoluminescence (PL) techniques. Injected electrons did not affect the excitons; however, injected holes caused significant quenching. Using a rate-equation analysis, the hole-induced exciton quenching rate was determined to be between 10-11 and 10-12 cm3 s-1. Interestingly, the TADF emission component was enhanced in the presence of injected holes, plausibly due to a reduction of the singlet-exciton energy level.

Original languageEnglish
Pages (from-to)7631-7636
Number of pages6
JournalJournal of Physical Chemistry C
Volume119
Issue number14
DOIs
Publication statusPublished - Jan 1 2015

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Surfaces, Coatings and Films
  • Physical and Theoretical Chemistry

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