Experimental characterization of oxide semiconductors-based SLM for practical use

Shunsuke Nakashima, Wataru Nomura, Naoya Tate

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have been studying the implementation of a line-oxide spatial light modulator (ZnO-SLM) using a light- assisted annealing method. It reveals novel performance as an optical switch based on surface current-induced magneto-optical effect As a step toward practical usef we experimentally verified possible integration densities and wavelength characteristics.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages1746-1748
Number of pages3
ISBN (Electronic)9781510845510
Publication statusPublished - Jan 1 2016
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: Dec 7 2016Dec 9 2016

Publication series

Name23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume3

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
CountryJapan
CityFukuoka
Period12/7/1612/9/16

Fingerprint

Magnetooptical effects
Optical switches
Induced currents
Oxides
Annealing
Wavelength
Oxide semiconductors
Spatial light modulators

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Nakashima, S., Nomura, W., & Tate, N. (2016). Experimental characterization of oxide semiconductors-based SLM for practical use. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 (pp. 1746-1748). (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016; Vol. 3). Society for Information Display.

Experimental characterization of oxide semiconductors-based SLM for practical use. / Nakashima, Shunsuke; Nomura, Wataru; Tate, Naoya.

23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. Society for Information Display, 2016. p. 1746-1748 (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016; Vol. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakashima, S, Nomura, W & Tate, N 2016, Experimental characterization of oxide semiconductors-based SLM for practical use. in 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016, vol. 3, Society for Information Display, pp. 1746-1748, 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016, Fukuoka, Japan, 12/7/16.
Nakashima S, Nomura W, Tate N. Experimental characterization of oxide semiconductors-based SLM for practical use. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. Society for Information Display. 2016. p. 1746-1748. (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016).
Nakashima, Shunsuke ; Nomura, Wataru ; Tate, Naoya. / Experimental characterization of oxide semiconductors-based SLM for practical use. 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. Society for Information Display, 2016. pp. 1746-1748 (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016).
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