Experimental confirmation of fundamental functions for a novel bloch line memory

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

In a novel Bloch line memory, vertical Bloch lines (VBL) in the stripe domain wall are used as information carriers, instead of bubble domain. Fundamental behaviors are experimentally observed on the garnet film supporting 5 μm bubble domains. Fundamental functions comprise VBL conversion to bubble domain, VBL injection into stripe domain head and VBL replication at VBL conversion to bubble domain. The VBLs are found to propagate along the stripe domain wall by using the gyrotropic force induced by wall motion.

Original languageEnglish
Pages (from-to)1841-1843
Number of pages3
JournalIEEE Transactions on Magnetics
Volume19
Issue number5
DOIs
Publication statusPublished - Jan 1 1983
Externally publishedYes

Fingerprint

Domain walls
Data storage equipment
Garnets

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Experimental confirmation of fundamental functions for a novel bloch line memory. / Hidaka, Y.; Matsuyama, Kimihide.

In: IEEE Transactions on Magnetics, Vol. 19, No. 5, 01.01.1983, p. 1841-1843.

Research output: Contribution to journalArticle

@article{5a136b55dbf64118b75c365a4a8bf3e4,
title = "Experimental confirmation of fundamental functions for a novel bloch line memory",
abstract = "In a novel Bloch line memory, vertical Bloch lines (VBL) in the stripe domain wall are used as information carriers, instead of bubble domain. Fundamental behaviors are experimentally observed on the garnet film supporting 5 μm bubble domains. Fundamental functions comprise VBL conversion to bubble domain, VBL injection into stripe domain head and VBL replication at VBL conversion to bubble domain. The VBLs are found to propagate along the stripe domain wall by using the gyrotropic force induced by wall motion.",
author = "Y. Hidaka and Kimihide Matsuyama",
year = "1983",
month = "1",
day = "1",
doi = "10.1109/TMAG.1983.1062792",
language = "English",
volume = "19",
pages = "1841--1843",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - Experimental confirmation of fundamental functions for a novel bloch line memory

AU - Hidaka, Y.

AU - Matsuyama, Kimihide

PY - 1983/1/1

Y1 - 1983/1/1

N2 - In a novel Bloch line memory, vertical Bloch lines (VBL) in the stripe domain wall are used as information carriers, instead of bubble domain. Fundamental behaviors are experimentally observed on the garnet film supporting 5 μm bubble domains. Fundamental functions comprise VBL conversion to bubble domain, VBL injection into stripe domain head and VBL replication at VBL conversion to bubble domain. The VBLs are found to propagate along the stripe domain wall by using the gyrotropic force induced by wall motion.

AB - In a novel Bloch line memory, vertical Bloch lines (VBL) in the stripe domain wall are used as information carriers, instead of bubble domain. Fundamental behaviors are experimentally observed on the garnet film supporting 5 μm bubble domains. Fundamental functions comprise VBL conversion to bubble domain, VBL injection into stripe domain head and VBL replication at VBL conversion to bubble domain. The VBLs are found to propagate along the stripe domain wall by using the gyrotropic force induced by wall motion.

UR - http://www.scopus.com/inward/record.url?scp=0020809892&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020809892&partnerID=8YFLogxK

U2 - 10.1109/TMAG.1983.1062792

DO - 10.1109/TMAG.1983.1062792

M3 - Article

VL - 19

SP - 1841

EP - 1843

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 5

ER -