Experimental evidence of zone-center optical phonon softening by accumulating holes in thin Ge

Shoichi Kabuyanagi; Tomonori Nishimura; Takeaki Yajima; Akira Toriumi

doi:10.1063/1.4941072

Experimental evidence of zone-center optical phonon softening by accumulating holes in thin Ge

Shoichi Kabuyanagi, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We discuss the impact of free carriers on the zone-center optical phonon frequency in germanium (Ge). By taking advantage of the Ge-on-insulator structure, we measured the Raman spectroscopy by applying back-gate bias. Phonon softening by accumulating holes in Ge film was clearly observed. This fact strongly suggests that the phonon softening in heavily-doped Ge is mainly attributed to the free carrier effect rather than the dopant atom counterpart. Furthermore, we propose that the free carrier effect on phonon softening is simply understandable from the viewpoint of covalent bonding modification by free carriers.

Original language	English
Article number	015114
Journal	AIP Advances
Volume	6
Issue number	1
DOIs	https://doi.org/10.1063/1.4941072
Publication status	Published - Jan 1 2016
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.4941072

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