Experimental study of the effect of interconnects on phase noise of K-band VCO in 0.18μm CMOS technology

Baichuan Chen, Nusrat Jahan, Adel Barakat, Ramesh K. Pokharel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, to characterize the effect of interconnects inductance on VCO's phase noise precisely, two K-band VCO circuits that employ DGS as an inductor are designed and analyzed. It's shown that not only the quality factor of the inductor in resonator has a significant effect on VCO's phase noise, the parasitic inductance of the interconnecting transmission lines will also inflect the phase noise severely. To get the Quantitative analysis, a K-band (25 GHz) VCO is implemented in the 0.18-mu mathrm{m} 1P6M CMOS process and measured.

Original languageEnglish
Title of host publicationProceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1670-1672
Number of pages3
ISBN (Electronic)9781728135175
DOIs
Publication statusPublished - Dec 2019
Event2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 - Singapore, Singapore
Duration: Dec 10 2019Dec 13 2019

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2019-December

Conference

Conference2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
CountrySingapore
CitySingapore
Period12/10/1912/13/19

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Chen, B., Jahan, N., Barakat, A., & Pokharel, R. K. (2019). Experimental study of the effect of interconnects on phase noise of K-band VCO in 0.18μm CMOS technology. In Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 (pp. 1670-1672). [9038781] (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC46564.2019.9038781