Experimental verification of a 3D scaling principle for low Vce(sat) IGBT

K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, Shinichi Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. OmuraH. Ohashi, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Three dimensionally (3D) scaled IGBTs that have a scaling factor of 3 (k=3) with respect to current commercial products (k=1) were fabricated for the first time. The scaling was applied to the lateral and vertical dimensions as well as the gate voltage. A significant decrease in ON resistance, - Vce(sat) reduction from 1.70 to 1.26 V - was experimentally confirmed for the 3D scaled IGBTs.

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages10.6.1-10.6.4
ISBN (Electronic)9781509039012
DOIs
Publication statusPublished - Jan 31 2017
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: Dec 3 2016Dec 7 2016

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period12/3/1612/7/16

Fingerprint

Insulated gate bipolar transistors (IGBT)
scaling
Electric potential
electric potential
products

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kakushima, K., Hoshii, T., Tsutsui, K., Nakajima, A., Nishizawa, S., Wakabayashi, H., ... Iwai, H. (2017). Experimental verification of a 3D scaling principle for low Vce(sat) IGBT. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 10.6.1-10.6.4). [7838390] (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838390

Experimental verification of a 3D scaling principle for low Vce(sat) IGBT. / Kakushima, K.; Hoshii, T.; Tsutsui, K.; Nakajima, A.; Nishizawa, Shinichi; Wakabayashi, H.; Muneta, I.; Sato, K.; Matsudai, T.; Saito, W.; Saraya, T.; Itou, K.; Fukui, M.; Suzuki, S.; Kobayashi, M.; Takakura, T.; Hiramoto, T.; Ogura, A.; Numasawa, Y.; Omura, I.; Ohashi, H.; Iwai, H.

2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 10.6.1-10.6.4 7838390 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kakushima, K, Hoshii, T, Tsutsui, K, Nakajima, A, Nishizawa, S, Wakabayashi, H, Muneta, I, Sato, K, Matsudai, T, Saito, W, Saraya, T, Itou, K, Fukui, M, Suzuki, S, Kobayashi, M, Takakura, T, Hiramoto, T, Ogura, A, Numasawa, Y, Omura, I, Ohashi, H & Iwai, H 2017, Experimental verification of a 3D scaling principle for low Vce(sat) IGBT. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838390, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 10.6.1-10.6.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 12/3/16. https://doi.org/10.1109/IEDM.2016.7838390
Kakushima K, Hoshii T, Tsutsui K, Nakajima A, Nishizawa S, Wakabayashi H et al. Experimental verification of a 3D scaling principle for low Vce(sat) IGBT. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 10.6.1-10.6.4. 7838390. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2016.7838390
Kakushima, K. ; Hoshii, T. ; Tsutsui, K. ; Nakajima, A. ; Nishizawa, Shinichi ; Wakabayashi, H. ; Muneta, I. ; Sato, K. ; Matsudai, T. ; Saito, W. ; Saraya, T. ; Itou, K. ; Fukui, M. ; Suzuki, S. ; Kobayashi, M. ; Takakura, T. ; Hiramoto, T. ; Ogura, A. ; Numasawa, Y. ; Omura, I. ; Ohashi, H. ; Iwai, H. / Experimental verification of a 3D scaling principle for low Vce(sat) IGBT. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 10.6.1-10.6.4 (Technical Digest - International Electron Devices Meeting, IEDM).
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