Abstract
The response of a neat semiconductor gas sensor to a reducing gas has successfully been formulated theoretically as a function of the partial pressure of target gas under the conditions of volume depletion and the presence of residual electrons inside the depletion region. This was achieved by considering the steady state of resistance instead of that of the surface density of adsorbed oxide ions. The derived equation, given as a combination of several physicochemical parameters, reproduces main features of practical response behavior well. It is exemplified that the equation provides the analysis or extension of response data with an important theoretical base.
| Original language | English |
|---|---|
| Pages (from-to) | 28-34 |
| Number of pages | 7 |
| Journal | Sensors and Actuators, B: Chemical |
| Volume | 158 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Nov 15 2011 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Explicit formulation for the response of neat oxide semiconductor gas sensor to reducing gas. / Yamazoe, Noboru; Shimanoe, Kengo.
In: Sensors and Actuators, B: Chemical, Vol. 158, No. 1, 15.11.2011, p. 28-34.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Explicit formulation for the response of neat oxide semiconductor gas sensor to reducing gas
AU - Yamazoe, Noboru
AU - Shimanoe, Kengo
PY - 2011/11/15
Y1 - 2011/11/15
N2 - The response of a neat semiconductor gas sensor to a reducing gas has successfully been formulated theoretically as a function of the partial pressure of target gas under the conditions of volume depletion and the presence of residual electrons inside the depletion region. This was achieved by considering the steady state of resistance instead of that of the surface density of adsorbed oxide ions. The derived equation, given as a combination of several physicochemical parameters, reproduces main features of practical response behavior well. It is exemplified that the equation provides the analysis or extension of response data with an important theoretical base.
AB - The response of a neat semiconductor gas sensor to a reducing gas has successfully been formulated theoretically as a function of the partial pressure of target gas under the conditions of volume depletion and the presence of residual electrons inside the depletion region. This was achieved by considering the steady state of resistance instead of that of the surface density of adsorbed oxide ions. The derived equation, given as a combination of several physicochemical parameters, reproduces main features of practical response behavior well. It is exemplified that the equation provides the analysis or extension of response data with an important theoretical base.
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UR - http://www.scopus.com/inward/citedby.url?scp=79960464800&partnerID=8YFLogxK
U2 - 10.1016/j.snb.2011.04.068
DO - 10.1016/j.snb.2011.04.068
M3 - Article
AN - SCOPUS:79960464800
VL - 158
SP - 28
EP - 34
JO - Sensors and Actuators, B: Chemical
JF - Sensors and Actuators, B: Chemical
SN - 0925-4005
IS - 1
ER -