Explicit formulation for the response of neat oxide semiconductor gas sensor to reducing gas

Noboru Yamazoe, Kengo Shimanoe

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The response of a neat semiconductor gas sensor to a reducing gas has successfully been formulated theoretically as a function of the partial pressure of target gas under the conditions of volume depletion and the presence of residual electrons inside the depletion region. This was achieved by considering the steady state of resistance instead of that of the surface density of adsorbed oxide ions. The derived equation, given as a combination of several physicochemical parameters, reproduces main features of practical response behavior well. It is exemplified that the equation provides the analysis or extension of response data with an important theoretical base.

Original languageEnglish
Pages (from-to)28-34
Number of pages7
JournalSensors and Actuators, B: Chemical
Volume158
Issue number1
DOIs
Publication statusPublished - Nov 15 2011

Fingerprint

Chemical sensors
Gases
formulations
oxides
sensors
depletion
gases
Partial pressure
Oxides
Ions
Semiconductor materials
partial pressure
Electrons
Oxide semiconductors
ions
electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Explicit formulation for the response of neat oxide semiconductor gas sensor to reducing gas. / Yamazoe, Noboru; Shimanoe, Kengo.

In: Sensors and Actuators, B: Chemical, Vol. 158, No. 1, 15.11.2011, p. 28-34.

Research output: Contribution to journalArticle

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