Exploration of new sensing electrode materials for FET-type NOx sensors with fast response

H. Inoue, M. Yuasa, T. Kida, Kengo Shimanoe, N. Yamazoe

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A FET type NO2 sensor fitted with NaNO2-RU/WO3 as a new auxiliary (sensing) layer was fabricated and tested for its NO2 sensing properties. The developed device responded to dilute NO2 of ppb concentrations (20-300 ppb) at 130 and 170 °C. The sensor signal (VGs; gate-source voltage) is linearly proportional to the logarithm of NO2 concentration, exhibiting the Nernstian response. It was found that the response speed was improved at lower operating temperature by adding Ru to the NaNO2-WO3 auxiliary layer. It was suggested that Ru nanoparticles deposited in the auxiliary layer with a porous morphology improved the rate of adsorption and electrochemical reaction of NO2 occurring at the interface between the Au gate electrode and auxiliary layer.

Original languageEnglish
Pages (from-to)912-915
Number of pages4
JournalSensor Letters
Volume6
Issue number6
DOIs
Publication statusPublished - Dec 1 2008

Fingerprint

electrode materials
Field effect transistors
field effect transistors
Electrodes
sensors
Sensors
Nanoparticles
Adsorption
Electric potential
operating temperature
logarithms
nanoparticles
Temperature
adsorption
electrodes
electric potential

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Exploration of new sensing electrode materials for FET-type NOx sensors with fast response. / Inoue, H.; Yuasa, M.; Kida, T.; Shimanoe, Kengo; Yamazoe, N.

In: Sensor Letters, Vol. 6, No. 6, 01.12.2008, p. 912-915.

Research output: Contribution to journalArticle

Inoue, H. ; Yuasa, M. ; Kida, T. ; Shimanoe, Kengo ; Yamazoe, N. / Exploration of new sensing electrode materials for FET-type NOx sensors with fast response. In: Sensor Letters. 2008 ; Vol. 6, No. 6. pp. 912-915.
@article{d3580fe72e124c0b9bcfc012a4465345,
title = "Exploration of new sensing electrode materials for FET-type NOx sensors with fast response",
abstract = "A FET type NO2 sensor fitted with NaNO2-RU/WO3 as a new auxiliary (sensing) layer was fabricated and tested for its NO2 sensing properties. The developed device responded to dilute NO2 of ppb concentrations (20-300 ppb) at 130 and 170 °C. The sensor signal (VGs; gate-source voltage) is linearly proportional to the logarithm of NO2 concentration, exhibiting the Nernstian response. It was found that the response speed was improved at lower operating temperature by adding Ru to the NaNO2-WO3 auxiliary layer. It was suggested that Ru nanoparticles deposited in the auxiliary layer with a porous morphology improved the rate of adsorption and electrochemical reaction of NO2 occurring at the interface between the Au gate electrode and auxiliary layer.",
author = "H. Inoue and M. Yuasa and T. Kida and Kengo Shimanoe and N. Yamazoe",
year = "2008",
month = "12",
day = "1",
doi = "10.1166/sl.2008.528",
language = "English",
volume = "6",
pages = "912--915",
journal = "Sensor Letters",
issn = "1546-198X",
publisher = "American Scientific Publishers",
number = "6",

}

TY - JOUR

T1 - Exploration of new sensing electrode materials for FET-type NOx sensors with fast response

AU - Inoue, H.

AU - Yuasa, M.

AU - Kida, T.

AU - Shimanoe, Kengo

AU - Yamazoe, N.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - A FET type NO2 sensor fitted with NaNO2-RU/WO3 as a new auxiliary (sensing) layer was fabricated and tested for its NO2 sensing properties. The developed device responded to dilute NO2 of ppb concentrations (20-300 ppb) at 130 and 170 °C. The sensor signal (VGs; gate-source voltage) is linearly proportional to the logarithm of NO2 concentration, exhibiting the Nernstian response. It was found that the response speed was improved at lower operating temperature by adding Ru to the NaNO2-WO3 auxiliary layer. It was suggested that Ru nanoparticles deposited in the auxiliary layer with a porous morphology improved the rate of adsorption and electrochemical reaction of NO2 occurring at the interface between the Au gate electrode and auxiliary layer.

AB - A FET type NO2 sensor fitted with NaNO2-RU/WO3 as a new auxiliary (sensing) layer was fabricated and tested for its NO2 sensing properties. The developed device responded to dilute NO2 of ppb concentrations (20-300 ppb) at 130 and 170 °C. The sensor signal (VGs; gate-source voltage) is linearly proportional to the logarithm of NO2 concentration, exhibiting the Nernstian response. It was found that the response speed was improved at lower operating temperature by adding Ru to the NaNO2-WO3 auxiliary layer. It was suggested that Ru nanoparticles deposited in the auxiliary layer with a porous morphology improved the rate of adsorption and electrochemical reaction of NO2 occurring at the interface between the Au gate electrode and auxiliary layer.

UR - http://www.scopus.com/inward/record.url?scp=63049099002&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63049099002&partnerID=8YFLogxK

U2 - 10.1166/sl.2008.528

DO - 10.1166/sl.2008.528

M3 - Article

VL - 6

SP - 912

EP - 915

JO - Sensor Letters

JF - Sensor Letters

SN - 1546-198X

IS - 6

ER -