Abstract
Thin films of La1.61GeO5-δ, a new oxide ionic conductor, were fabricated on dense polycrystalline Al2O3 substrates by a pulsed laser deposition (PLD) method and the effect of the film thickness on the oxide ionic conductivity was investigated on the nanoscale. The deposition parameters were optimized to obtain La1.61GeO5-δ thin films with stoichiometric composition. Annealing was found necessary to get crystalline La1.61GeO5-δ thin films. It was also found that the annealed La1.61GeO5-δ film exhibited extraordinarily high oxide ionic conductivity. Due to the nano-size effects, the oxide ion conductivity of La1.61GeO5-δ thin films increased with the decreasing thickness as compared to that in bulk La1.61GeO5-δ. In particular, the improvement in conductivity of the film at low temperature was significant .The electrical conductivity of the La1.61GeO5-δ film with a thickness of 373 nm is as high as 0.05 S cm- 1 (log(σ/S cm- 1) = - 1.3) at 573 K.
| Original language | English |
|---|---|
| Pages (from-to) | 1733-1736 |
| Number of pages | 4 |
| Journal | Solid State Ionics |
| Volume | 177 |
| Issue number | 19-25 SPEC. ISS. |
| DOIs | |
| Publication status | Published - Oct 15 2006 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
Cite this
Extraordinary fast oxide ion conductivity in La1.61GeO5-δ thin film consisting of nano-size grain. / Ishihara, Tatsumi; Yan, Jingwang; Matsumoto, Hiroshige.
In: Solid State Ionics, Vol. 177, No. 19-25 SPEC. ISS., 15.10.2006, p. 1733-1736.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Extraordinary fast oxide ion conductivity in La1.61GeO5-δ thin film consisting of nano-size grain
AU - Ishihara, Tatsumi
AU - Yan, Jingwang
AU - Matsumoto, Hiroshige
PY - 2006/10/15
Y1 - 2006/10/15
N2 - Thin films of La1.61GeO5-δ, a new oxide ionic conductor, were fabricated on dense polycrystalline Al2O3 substrates by a pulsed laser deposition (PLD) method and the effect of the film thickness on the oxide ionic conductivity was investigated on the nanoscale. The deposition parameters were optimized to obtain La1.61GeO5-δ thin films with stoichiometric composition. Annealing was found necessary to get crystalline La1.61GeO5-δ thin films. It was also found that the annealed La1.61GeO5-δ film exhibited extraordinarily high oxide ionic conductivity. Due to the nano-size effects, the oxide ion conductivity of La1.61GeO5-δ thin films increased with the decreasing thickness as compared to that in bulk La1.61GeO5-δ. In particular, the improvement in conductivity of the film at low temperature was significant .The electrical conductivity of the La1.61GeO5-δ film with a thickness of 373 nm is as high as 0.05 S cm- 1 (log(σ/S cm- 1) = - 1.3) at 573 K.
AB - Thin films of La1.61GeO5-δ, a new oxide ionic conductor, were fabricated on dense polycrystalline Al2O3 substrates by a pulsed laser deposition (PLD) method and the effect of the film thickness on the oxide ionic conductivity was investigated on the nanoscale. The deposition parameters were optimized to obtain La1.61GeO5-δ thin films with stoichiometric composition. Annealing was found necessary to get crystalline La1.61GeO5-δ thin films. It was also found that the annealed La1.61GeO5-δ film exhibited extraordinarily high oxide ionic conductivity. Due to the nano-size effects, the oxide ion conductivity of La1.61GeO5-δ thin films increased with the decreasing thickness as compared to that in bulk La1.61GeO5-δ. In particular, the improvement in conductivity of the film at low temperature was significant .The electrical conductivity of the La1.61GeO5-δ film with a thickness of 373 nm is as high as 0.05 S cm- 1 (log(σ/S cm- 1) = - 1.3) at 573 K.
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UR - http://www.scopus.com/inward/citedby.url?scp=33749996461&partnerID=8YFLogxK
U2 - 10.1016/j.ssi.2006.06.005
DO - 10.1016/j.ssi.2006.06.005
M3 - Article
AN - SCOPUS:33749996461
VL - 177
SP - 1733
EP - 1736
JO - Solid State Ionics
JF - Solid State Ionics
SN - 0167-2738
IS - 19-25 SPEC. ISS.
ER -