Extraordinary fast oxide ion conductivity in La1.61GeO5-δ thin film consisting of nano-size grain

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Abstract

Thin films of La1.61GeO5-δ, a new oxide ionic conductor, were fabricated on dense polycrystalline Al2O3 substrates by a pulsed laser deposition (PLD) method and the effect of the film thickness on the oxide ionic conductivity was investigated on the nanoscale. The deposition parameters were optimized to obtain La1.61GeO5-δ thin films with stoichiometric composition. Annealing was found necessary to get crystalline La1.61GeO5-δ thin films. It was also found that the annealed La1.61GeO5-δ film exhibited extraordinarily high oxide ionic conductivity. Due to the nano-size effects, the oxide ion conductivity of La1.61GeO5-δ thin films increased with the decreasing thickness as compared to that in bulk La1.61GeO5-δ. In particular, the improvement in conductivity of the film at low temperature was significant .The electrical conductivity of the La1.61GeO5-δ film with a thickness of 373 nm is as high as 0.05 S cm- 1 (log(σ/S cm- 1) = - 1.3) at 573 K.

Original languageEnglish
Pages (from-to)1733-1736
Number of pages4
JournalSolid State Ionics
Volume177
Issue number19-25 SPEC. ISS.
DOIs
Publication statusPublished - Oct 15 2006

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Oxides
grain size
Ions
Thin films
conductivity
oxides
Ionic conductivity
thin films
ion currents
ions
Pulsed laser deposition
pulsed laser deposition
Film thickness
film thickness
conductors
Annealing
Crystalline materials
electrical resistivity
annealing
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Extraordinary fast oxide ion conductivity in La1.61GeO5-δ thin film consisting of nano-size grain. / Ishihara, Tatsumi; Yan, Jingwang; Matsumoto, Hiroshige.

In: Solid State Ionics, Vol. 177, No. 19-25 SPEC. ISS., 15.10.2006, p. 1733-1736.

Research output: Contribution to journalArticle

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N2 - Thin films of La1.61GeO5-δ, a new oxide ionic conductor, were fabricated on dense polycrystalline Al2O3 substrates by a pulsed laser deposition (PLD) method and the effect of the film thickness on the oxide ionic conductivity was investigated on the nanoscale. The deposition parameters were optimized to obtain La1.61GeO5-δ thin films with stoichiometric composition. Annealing was found necessary to get crystalline La1.61GeO5-δ thin films. It was also found that the annealed La1.61GeO5-δ film exhibited extraordinarily high oxide ionic conductivity. Due to the nano-size effects, the oxide ion conductivity of La1.61GeO5-δ thin films increased with the decreasing thickness as compared to that in bulk La1.61GeO5-δ. In particular, the improvement in conductivity of the film at low temperature was significant .The electrical conductivity of the La1.61GeO5-δ film with a thickness of 373 nm is as high as 0.05 S cm- 1 (log(σ/S cm- 1) = - 1.3) at 573 K.

AB - Thin films of La1.61GeO5-δ, a new oxide ionic conductor, were fabricated on dense polycrystalline Al2O3 substrates by a pulsed laser deposition (PLD) method and the effect of the film thickness on the oxide ionic conductivity was investigated on the nanoscale. The deposition parameters were optimized to obtain La1.61GeO5-δ thin films with stoichiometric composition. Annealing was found necessary to get crystalline La1.61GeO5-δ thin films. It was also found that the annealed La1.61GeO5-δ film exhibited extraordinarily high oxide ionic conductivity. Due to the nano-size effects, the oxide ion conductivity of La1.61GeO5-δ thin films increased with the decreasing thickness as compared to that in bulk La1.61GeO5-δ. In particular, the improvement in conductivity of the film at low temperature was significant .The electrical conductivity of the La1.61GeO5-δ film with a thickness of 373 nm is as high as 0.05 S cm- 1 (log(σ/S cm- 1) = - 1.3) at 573 K.

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