Extremely enhanced diffusion of nitrogen in 4H-SiC observed in liquid-nitrogen immersion irradiation of excimer laser

A. Ikeda, D. Marui, H. Ikenoue, T. Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2014
EditorsDidier Chaussende, Gabriel Ferro
PublisherTrans Tech Publications Ltd
Pages448-451
Number of pages4
ISBN (Print)9783038354789
DOIs
Publication statusPublished - Jan 1 2015
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: Sep 21 2014Sep 25 2014

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period9/21/149/25/14

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ikeda, A., Marui, D., Ikenoue, H., & Asano, T. (2015). Extremely enhanced diffusion of nitrogen in 4H-SiC observed in liquid-nitrogen immersion irradiation of excimer laser. In D. Chaussende, & G. Ferro (Eds.), Silicon Carbide and Related Materials 2014 (pp. 448-451). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.448