Extremely enhanced diffusion of nitrogen in 4H-SiC observed in liquid-nitrogen immersion irradiation of excimer laser

A. Ikeda, D. Marui, H. Ikenoue, T. Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2014
EditorsDidier Chaussende, Gabriel Ferro
PublisherTrans Tech Publications Ltd
Pages448-451
Number of pages4
ISBN (Print)9783038354789
DOIs
Publication statusPublished - Jan 1 2015
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: Sep 21 2014Sep 25 2014

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)0255-5476

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period9/21/149/25/14

Fingerprint

Excimer lasers
Liquid nitrogen
Nitrogen
Doping (additives)
Irradiation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ikeda, A., Marui, D., Ikenoue, H., & Asano, T. (2015). Extremely enhanced diffusion of nitrogen in 4H-SiC observed in liquid-nitrogen immersion irradiation of excimer laser. In D. Chaussende, & G. Ferro (Eds.), Silicon Carbide and Related Materials 2014 (pp. 448-451). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.448

Extremely enhanced diffusion of nitrogen in 4H-SiC observed in liquid-nitrogen immersion irradiation of excimer laser. / Ikeda, A.; Marui, D.; Ikenoue, H.; Asano, T.

Silicon Carbide and Related Materials 2014. ed. / Didier Chaussende; Gabriel Ferro. Trans Tech Publications Ltd, 2015. p. 448-451 (Materials Science Forum; Vol. 821-823).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ikeda, A, Marui, D, Ikenoue, H & Asano, T 2015, Extremely enhanced diffusion of nitrogen in 4H-SiC observed in liquid-nitrogen immersion irradiation of excimer laser. in D Chaussende & G Ferro (eds), Silicon Carbide and Related Materials 2014. Materials Science Forum, vol. 821-823, Trans Tech Publications Ltd, pp. 448-451, European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 9/21/14. https://doi.org/10.4028/www.scientific.net/MSF.821-823.448
Ikeda A, Marui D, Ikenoue H, Asano T. Extremely enhanced diffusion of nitrogen in 4H-SiC observed in liquid-nitrogen immersion irradiation of excimer laser. In Chaussende D, Ferro G, editors, Silicon Carbide and Related Materials 2014. Trans Tech Publications Ltd. 2015. p. 448-451. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.821-823.448
Ikeda, A. ; Marui, D. ; Ikenoue, H. ; Asano, T. / Extremely enhanced diffusion of nitrogen in 4H-SiC observed in liquid-nitrogen immersion irradiation of excimer laser. Silicon Carbide and Related Materials 2014. editor / Didier Chaussende ; Gabriel Ferro. Trans Tech Publications Ltd, 2015. pp. 448-451 (Materials Science Forum).
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