Extremely low loss 4 x 4 GaAs/AlGaAs optical matrix switch

Kiichi Hamamoto, S. Sugou, K. Komatsu, M. Kitamura

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A 4 x 4 GaAs/AlGaAs optical matrix switch with an extremely low loss of 1.6dB has been developed. This low loss switch was achieved by layer structure modification, to reduce free-carrier absorption, reduction of plasma damage while dry etching, and an improvement in the crystal quality.

Original languageEnglish
Pages (from-to)1580-1582
Number of pages3
JournalElectronics Letters
Volume29
Issue number17
DOIs
Publication statusPublished - Jan 1 1993
Externally publishedYes

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Switches
Dry etching
Plasmas
Crystals

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Extremely low loss 4 x 4 GaAs/AlGaAs optical matrix switch. / Hamamoto, Kiichi; Sugou, S.; Komatsu, K.; Kitamura, M.

In: Electronics Letters, Vol. 29, No. 17, 01.01.1993, p. 1580-1582.

Research output: Contribution to journalArticle

Hamamoto, Kiichi ; Sugou, S. ; Komatsu, K. ; Kitamura, M. / Extremely low loss 4 x 4 GaAs/AlGaAs optical matrix switch. In: Electronics Letters. 1993 ; Vol. 29, No. 17. pp. 1580-1582.
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