Extremely low-threshold amplified spontaneous emission of 9,9′-spirobifluorene derivatives and electroluminescence from field-effect transistor structure

Hajime Nakanotani, Seiji Akiyama, Dai Ohnishi, Masato Moriwake, Masayuki Yahiro, Toshitada Yoshihara, Seiji Tobita, Chihaya Adachi

Research output: Contribution to journalArticle

97 Citations (Scopus)

Abstract

By doping 2,7-bis[4-(/V-carbazole)phenylvinyl]-9,9′-spirobifluorene (spiro-SBCz) into a wide energy gap 4,4′-bis(9-carbazole)-2,2′- biphenyl (CBP) host, we demonstrate an extremely low ASE threshold of E th = (0.11±0.05) μJ cm-2 (220 W cm-2) which is the lowest ASE threshold ever reported. In addition, we confirmed that the spiro-SBCz thin film functions as an active light emitting layer in organic light-emitting diode (OLED) and a field-effect transistor (FET). In particular, we succeeded to obtain linear electroluminescence in the FET structure which will be useful for future organic laser diodes.

Original languageEnglish
Pages (from-to)2328-2335
Number of pages8
JournalAdvanced Functional Materials
Volume17
Issue number14
DOIs
Publication statusPublished - Sep 24 2007

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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