Extremely low voltage organic light-emitting diodes with p -doped alpha-sexithiophene hole transport and n -doped phenyldipyrenylphosphine oxide electron transport layers

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Abstract

Organic light-emitting diodes with p -doped alpha-sexithiophene and n -doped phenyldipyrenylphosphine oxide carrier transport layers are fabricated. In the doped diodes, the authors demonstrate an extremely low driving voltage of 2.9 V at a current density of 100 mA cm2 and very high luminance at a low driving voltage: 1000 cd m2 at 2.4 V, 10 000 cd m2 at 2.8 V, and 920 000 cd m2 at 4.5 V. Such lowered driving voltages and enhanced luminance characteristics are attributed to the generation of free charge carriers by charge transfer from matrix to dopant molecules, resulting in an increase in electrical conductivities and formation of Ohmic contacts at metal/organic interfaces.

Original languageEnglish
Article number253506
JournalApplied Physics Letters
Volume89
Issue number25
DOIs
Publication statusPublished - Dec 1 2006

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luminance
low voltage
light emitting diodes
oxides
charge carriers
electric contacts
electrons
diodes
charge transfer
current density
electrical resistivity
electric potential
matrices
metals
molecules

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Extremely low voltage organic light-emitting diodes with p -doped alpha-sexithiophene hole transport and n -doped phenyldipyrenylphosphine oxide electron transport layers",
abstract = "Organic light-emitting diodes with p -doped alpha-sexithiophene and n -doped phenyldipyrenylphosphine oxide carrier transport layers are fabricated. In the doped diodes, the authors demonstrate an extremely low driving voltage of 2.9 V at a current density of 100 mA cm2 and very high luminance at a low driving voltage: 1000 cd m2 at 2.4 V, 10 000 cd m2 at 2.8 V, and 920 000 cd m2 at 4.5 V. Such lowered driving voltages and enhanced luminance characteristics are attributed to the generation of free charge carriers by charge transfer from matrix to dopant molecules, resulting in an increase in electrical conductivities and formation of Ohmic contacts at metal/organic interfaces.",
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T1 - Extremely low voltage organic light-emitting diodes with p -doped alpha-sexithiophene hole transport and n -doped phenyldipyrenylphosphine oxide electron transport layers

AU - Matsusima, Toshinori

AU - Adachi, Chihaya

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N2 - Organic light-emitting diodes with p -doped alpha-sexithiophene and n -doped phenyldipyrenylphosphine oxide carrier transport layers are fabricated. In the doped diodes, the authors demonstrate an extremely low driving voltage of 2.9 V at a current density of 100 mA cm2 and very high luminance at a low driving voltage: 1000 cd m2 at 2.4 V, 10 000 cd m2 at 2.8 V, and 920 000 cd m2 at 4.5 V. Such lowered driving voltages and enhanced luminance characteristics are attributed to the generation of free charge carriers by charge transfer from matrix to dopant molecules, resulting in an increase in electrical conductivities and formation of Ohmic contacts at metal/organic interfaces.

AB - Organic light-emitting diodes with p -doped alpha-sexithiophene and n -doped phenyldipyrenylphosphine oxide carrier transport layers are fabricated. In the doped diodes, the authors demonstrate an extremely low driving voltage of 2.9 V at a current density of 100 mA cm2 and very high luminance at a low driving voltage: 1000 cd m2 at 2.4 V, 10 000 cd m2 at 2.8 V, and 920 000 cd m2 at 4.5 V. Such lowered driving voltages and enhanced luminance characteristics are attributed to the generation of free charge carriers by charge transfer from matrix to dopant molecules, resulting in an increase in electrical conductivities and formation of Ohmic contacts at metal/organic interfaces.

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