Extremely wide and uniform hysteresis windows (32mA) for integrated optical RAM using novel active MMI-BLD

H. A. Bastawrous, H. Jiang, Y. Tahara, S. Matsuo, K. Hamamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Integrated optical RAM showed extremely wide and uniform hysteresis windows of 32mA ± 2mA (with operation current around 70mA) using novel active MMI-BLD, with relatively high ON/OFF ratio of 18dB in 315×600μm 2 total device size.

Original languageEnglish
Title of host publication2009 Conference on Optical Fiber Communication, OFC 2009
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781557528650
Publication statusPublished - Jan 1 2009
Event2009 Conference on Optical Fiber Communication, OFC 2009 - San Diego, CA, United States
Duration: Mar 22 2009Mar 26 2009

Publication series

NameConference on Optical Fiber Communication, Technical Digest Series

Other

Other2009 Conference on Optical Fiber Communication, OFC 2009
CountryUnited States
CitySan Diego, CA
Period3/22/093/26/09

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Bastawrous, H. A., Jiang, H., Tahara, Y., Matsuo, S., & Hamamoto, K. (2009). Extremely wide and uniform hysteresis windows (32mA) for integrated optical RAM using novel active MMI-BLD. In 2009 Conference on Optical Fiber Communication, OFC 2009 [5032812] (Conference on Optical Fiber Communication, Technical Digest Series). Institute of Electrical and Electronics Engineers Inc..