Abstract
MOS electron tunneling emission cathodes have been fabricated with CoSi 2-SiO 2-Si structures, and the emission characteristics were evaluated. The 10-20 nm CoSi 2 layers were formed on 10 nm SiO 2 films by the molecular beam deposition (MBD). The electron emission occurred from the gate area by electron tunneling through the potential barrier in the MOS diode. The transfer ratio, i.e., the ratio of the emission current to the total current flowing through the MOS diode, was 1.4×10 -4. The emission was independent of pressure in the range of 1×10 -4-6×10 -6 Torr and stable over a long period of 100 min.
| Original language | English |
|---|---|
| Pages (from-to) | 43-46 |
| Number of pages | 4 |
| Journal | Research Reports on Information Science and Electrical Engineering of Kyushu University |
| Volume | 4 |
| Issue number | 1 |
| Publication status | Published - Mar 1 1999 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Hardware and Architecture
- Engineering (miscellaneous)