Fabrication and characteristics evaluation of CoSi 2-gate MOS electron tunneling emission cathode

Yi Qun Zhang, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Toshio Tsurushima

Research output: Contribution to journalArticle

Abstract

MOS electron tunneling emission cathodes have been fabricated with CoSi 2-SiO 2-Si structures, and the emission characteristics were evaluated. The 10-20 nm CoSi 2 layers were formed on 10 nm SiO 2 films by the molecular beam deposition (MBD). The electron emission occurred from the gate area by electron tunneling through the potential barrier in the MOS diode. The transfer ratio, i.e., the ratio of the emission current to the total current flowing through the MOS diode, was 1.4×10 -4. The emission was independent of pressure in the range of 1×10 -4-6×10 -6 Torr and stable over a long period of 100 min.

Original languageEnglish
Pages (from-to)43-46
Number of pages4
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume4
Issue number1
Publication statusPublished - Mar 1 1999
Externally publishedYes

Fingerprint

Electron tunneling
Diodes
Cathodes
Fabrication
Molecular beams
Electron emission

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Engineering (miscellaneous)

Cite this

Fabrication and characteristics evaluation of CoSi 2-gate MOS electron tunneling emission cathode. / Zhang, Yi Qun; Kenjo, Atsushi; Sadoh, Taizoh; Nakashima, Hiroshi; Tsurushima, Toshio.

In: Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 4, No. 1, 01.03.1999, p. 43-46.

Research output: Contribution to journalArticle

@article{24549cdb91064b17891441ea0e05f569,
title = "Fabrication and characteristics evaluation of CoSi 2-gate MOS electron tunneling emission cathode",
abstract = "MOS electron tunneling emission cathodes have been fabricated with CoSi 2-SiO 2-Si structures, and the emission characteristics were evaluated. The 10-20 nm CoSi 2 layers were formed on 10 nm SiO 2 films by the molecular beam deposition (MBD). The electron emission occurred from the gate area by electron tunneling through the potential barrier in the MOS diode. The transfer ratio, i.e., the ratio of the emission current to the total current flowing through the MOS diode, was 1.4×10 -4. The emission was independent of pressure in the range of 1×10 -4-6×10 -6 Torr and stable over a long period of 100 min.",
author = "Zhang, {Yi Qun} and Atsushi Kenjo and Taizoh Sadoh and Hiroshi Nakashima and Toshio Tsurushima",
year = "1999",
month = "3",
day = "1",
language = "English",
volume = "4",
pages = "43--46",
journal = "Research Reports on Information Science and Electrical Engineering of Kyushu University",
issn = "1342-3819",
publisher = "Kyushu University, Faculty of Science",
number = "1",

}

TY - JOUR

T1 - Fabrication and characteristics evaluation of CoSi 2-gate MOS electron tunneling emission cathode

AU - Zhang, Yi Qun

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Nakashima, Hiroshi

AU - Tsurushima, Toshio

PY - 1999/3/1

Y1 - 1999/3/1

N2 - MOS electron tunneling emission cathodes have been fabricated with CoSi 2-SiO 2-Si structures, and the emission characteristics were evaluated. The 10-20 nm CoSi 2 layers were formed on 10 nm SiO 2 films by the molecular beam deposition (MBD). The electron emission occurred from the gate area by electron tunneling through the potential barrier in the MOS diode. The transfer ratio, i.e., the ratio of the emission current to the total current flowing through the MOS diode, was 1.4×10 -4. The emission was independent of pressure in the range of 1×10 -4-6×10 -6 Torr and stable over a long period of 100 min.

AB - MOS electron tunneling emission cathodes have been fabricated with CoSi 2-SiO 2-Si structures, and the emission characteristics were evaluated. The 10-20 nm CoSi 2 layers were formed on 10 nm SiO 2 films by the molecular beam deposition (MBD). The electron emission occurred from the gate area by electron tunneling through the potential barrier in the MOS diode. The transfer ratio, i.e., the ratio of the emission current to the total current flowing through the MOS diode, was 1.4×10 -4. The emission was independent of pressure in the range of 1×10 -4-6×10 -6 Torr and stable over a long period of 100 min.

UR - http://www.scopus.com/inward/record.url?scp=0032633621&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032633621&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032633621

VL - 4

SP - 43

EP - 46

JO - Research Reports on Information Science and Electrical Engineering of Kyushu University

JF - Research Reports on Information Science and Electrical Engineering of Kyushu University

SN - 1342-3819

IS - 1

ER -