Fabrication and characterization of a CeO2 buffer layer on c-plane and tilt-c-plane sapphire substrates

M. Shirakawa, J. Unno, K. Aizawa, M. Kusunoki, M. Mukaida, S. Ohshima

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


We have examined in-plane orientation of CeO2 buffer layers on c-plane and tilt-c-plane sapphire substrates. The tilt angles are 5°, 10° and 15°, which are defined as the angles between the c-plane and the surface planes of the sapphire substrates (called 5°, 10°, 15° tilt-c-plane substrates). The films were prepared by inductively coupled plasma sputtering. The in-plane orientation of the films was measured using X-ray φ-scan. φ-scan peaks of films fabricated on c-plane substrates appeared every nπ/6 or nπ/12 (n: integer), showing 12-fold or 24-fold symmetry. The in-plane orientation is influenced by the hexagonal symmetry of the sapphire c-plane. The degree of film orientation depends on the substrate temperature during preparation. On the other hand, we found weak 4-fold symmetry for films fabricated on 10° and 15° tilt-c-plane substrates. This suggests that we can obtain CeO2 films with perfect 4-fold symmetry on tilt-c-plane sapphire substrates.

Original languageEnglish
Pages (from-to)1346-1352
Number of pages7
JournalPhysica C: Superconductivity and its applications
Issue numberPART 2
Publication statusPublished - Oct 1 2003
Externally publishedYes
EventProceedings of the 15th International Symposium on Superconduc - Yokohama, Japan
Duration: Nov 11 2002Nov 13 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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