Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate

Takayuki Maekrua, Taiki Goto, Kohei Nakae, Keisuke Yamamoto, Hiroshi Nakashima, Dong Wang

Research output: Contribution to journalArticle

Abstract

We fabricated asymmetric metal/Ge/metal diodes with p-type Ge-on-insulator (GOI) and bulk Ge substrates, from which direct band gap electroluminescence (EL) was observed at room temperature. The integrated EL intensity for p-GOI diodes is approximately 16 times that for bulk p-Ge diodes, owing to the structure of GOI that confines carriers in the very thin Ge layer, and consequently enhances both the electron density in the conduction band and the efficiency of radiative recombination. Micro-photoluminescence spectra of p-GOI show defect-related peaks in the range of 0.70-0.75 eV, of which the intensity and energy depend on the measurement position, which implies fluctuation of defect type and density in p-GOI. Those defects contribute to the low-energy part of the broad EL spectra in p-GOI diodes.

Original languageEnglish
Article numberSBBE05
JournalJapanese Journal of Applied Physics
Volume58
Issue numberSB
DOIs
Publication statusPublished - Jan 1 2019

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Electroluminescence
Diodes
diodes
insulators
Fabrication
fabrication
Substrates
Metals
electroluminescence
metals
Defects
Position measurement
defects
Conduction bands
Carrier concentration
Photoluminescence
Energy gap
radiative recombination
conduction bands
photoluminescence

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate. / Maekrua, Takayuki; Goto, Taiki; Nakae, Kohei; Yamamoto, Keisuke; Nakashima, Hiroshi; Wang, Dong.

In: Japanese Journal of Applied Physics, Vol. 58, No. SB, SBBE05, 01.01.2019.

Research output: Contribution to journalArticle

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