Fabrication and characterization of CoSi2 gate MOS tunnel structure

Yi Qun Zhang, Atsushi Matsushita, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Noboru Teshima, Hiroshi Mori, Toshio Tsurushima

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Abstract

Fabrication processes and electrical characteristics of CoSi2 gate MOS tunnel structures haye been studied. Thin CoSi2 layers were grown on thin SiU2 films by molecular beam deposition (MBD). Co and Si were simultaneously deposited with a deposition ratio of Co : Si = 1 : 2. The structural and electrical properties of the CoSi2 layers were investigated by X-ray diffraction and Van der Pauw methods. The CoSi2 phase was observed for samples deposited at a temperature between room temperature and 400°C. The resistivity of the layers deposited at 400°C was close to the value of CoSi2 and did not depend on the thickness of the layers between 140 and 440Å. I-V characteristics for the CoSi2-SiO2-Si MOS structures were also investigated. For samples deposited under 200°C, the leak current was very larger, and Fowler-Nordheim tunnel current was not observed. On the other hand, for samples deposited above 300°C, Fowler-Nordheim tunnel current was observed. The values of the barrier height for the tunneling were estimated as 2.8 eV and 3.0 eV for samples deposited at 300°C and 400°C, respectively.

Original languageEnglish
Pages (from-to)257-260
Number of pages4
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume3
Issue number2
Publication statusPublished - Sep 1998

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All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

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