Abstract
A novel ferromagnetic tunnel junction with transition metal oxides has been fabricated with photo-lithographic technique. Well defined tunneling properties were observed in a novel barrier material of TiOx with the thickness down to 2 nm. Spin dependent transport properties have been confirmed for Fe3O4/ TiOx/M (M = Co, Co/NiFe, NiFe) tunnel junctions, where highest magneto-resistance (MR) change of 7% was observed for Co. Drastic improvement of field sensitivity was attained with the exchange coupled Co/ NiFe bi-layer.
| Original language | English |
|---|---|
| Pages (from-to) | 63-66 |
| Number of pages | 4 |
| Journal | Research Reports on Information Science and Electrical Engineering of Kyushu University |
| Volume | 10 |
| Issue number | 1 |
| Publication status | Published - Mar 2005 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Hardware and Architecture
- Engineering (miscellaneous)