A novel ferromagnetic tunnel junction with transition metal oxides has been fabricated with photo-lithographic technique. Well defined tunneling properties were observed in a novel barrier material of TiOx with the thickness down to 2 nm. Spin dependent transport properties have been confirmed for Fe3O4/ TiOx/M (M = Co, Co/NiFe, NiFe) tunnel junctions, where highest magneto-resistance (MR) change of 7% was observed for Co. Drastic improvement of field sensitivity was attained with the exchange coupled Co/ NiFe bi-layer.
|Number of pages||4|
|Journal||Research Reports on Information Science and Electrical Engineering of Kyushu University|
|Publication status||Published - Mar 2005|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Hardware and Architecture
- Engineering (miscellaneous)