Fabrication and characterization of metal and semiconductor SmS thin films by rf/dc dual magnetron sputtering

S. Tanemura, S. Koide, Y. Senzaki, L. Miao, H. Hirai, Y. Mori, P. Jin, Kenji Kaneko, A. Terai, N. Nabatova-Gabain

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

SmS thin films have been individually fabricated on either a-SiO/Si or NaCl substrates at a room temperature by dual targets (dc for metal Sm and rf for pressed powdered chalcogenide Sm 2 S 3 ) magnetron sputtering of concurrent power control. The fabricated films were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE), respectively, to identify phase formation, structure, and optical band gap. The followings are summarized: (1) polycrystalline metal, intermedium, or semiconductor SmS thin films were identified by XRD, TEM and the phase formation was achieved by controlling the ratio of dc to rf power; (2) the obtained lattice constant of intermedium phase was 5.85 Å from electron diffraction (ED) and 5.91 Å from lattice image. The former value is contraction by 2% compared with bulk semiconductor (5.97 Å), while the later one is contraction by 1% compared with semiconducting one, although this being probably semiconductor which is suggested by the dominated Sm 2+ valence state in Sm 3d of XPS; (3) XPS depth profile result confirm that metal Sm and samarium oxide exist near the film-substrate boundary in intermedium case, while stoichiometric SmS is dominant at the surface layer; (4) in semiconductor case, optical band gap is 2.67eV obtained by Tauc plot from SE results.

Original languageEnglish
Pages (from-to)279-286
Number of pages8
JournalApplied Surface Science
Volume212-213
Issue numberSPEC.
DOIs
Publication statusPublished - May 15 2003

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Magnetron sputtering
Metals
Semiconductor materials
Fabrication
Thin films
X ray photoelectron spectroscopy
Spectroscopic ellipsometry
Optical band gaps
Transmission electron microscopy
X ray diffraction
Samarium
Substrates
Power control
Electron diffraction
Lattice constants
Oxides
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Tanemura, S., Koide, S., Senzaki, Y., Miao, L., Hirai, H., Mori, Y., ... Nabatova-Gabain, N. (2003). Fabrication and characterization of metal and semiconductor SmS thin films by rf/dc dual magnetron sputtering. Applied Surface Science, 212-213(SPEC.), 279-286. https://doi.org/10.1016/S0169-4332(03)00113-2

Fabrication and characterization of metal and semiconductor SmS thin films by rf/dc dual magnetron sputtering. / Tanemura, S.; Koide, S.; Senzaki, Y.; Miao, L.; Hirai, H.; Mori, Y.; Jin, P.; Kaneko, Kenji; Terai, A.; Nabatova-Gabain, N.

In: Applied Surface Science, Vol. 212-213, No. SPEC., 15.05.2003, p. 279-286.

Research output: Contribution to journalArticle

Tanemura, S, Koide, S, Senzaki, Y, Miao, L, Hirai, H, Mori, Y, Jin, P, Kaneko, K, Terai, A & Nabatova-Gabain, N 2003, 'Fabrication and characterization of metal and semiconductor SmS thin films by rf/dc dual magnetron sputtering', Applied Surface Science, vol. 212-213, no. SPEC., pp. 279-286. https://doi.org/10.1016/S0169-4332(03)00113-2
Tanemura, S. ; Koide, S. ; Senzaki, Y. ; Miao, L. ; Hirai, H. ; Mori, Y. ; Jin, P. ; Kaneko, Kenji ; Terai, A. ; Nabatova-Gabain, N. / Fabrication and characterization of metal and semiconductor SmS thin films by rf/dc dual magnetron sputtering. In: Applied Surface Science. 2003 ; Vol. 212-213, No. SPEC. pp. 279-286.
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AU - Koide, S.

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AU - Miao, L.

AU - Hirai, H.

AU - Mori, Y.

AU - Jin, P.

AU - Kaneko, Kenji

AU - Terai, A.

AU - Nabatova-Gabain, N.

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