Abstract
We have been establishing the technique of fabricating spherical semiconductor microcrystals with suitable diameters for whispering gallery mode (WGM) lasing. Concretely, semiconductor microspheres were synthesized by ablating various semiconductor-sintered targets with focused pulsed laser at high fluences. In this report, dependences of fabricated zinc oxide (ZnO) microstructures on laser wavelengths were investigated. Lasing characteristics and photoluminescence of ZnO microspheres were determined, and photoluminescence of Sb-doped ZnO microspheres were determined. Additionally, it was also found that Sb-doped ZnO and aluminum nitride microspheres can be similarly synthesized. By developing this method, which does not require complex processing, it is expected that efforts in the application of WGM lasing are accelerated in many kinds of semiconductors.
| Original language | English |
|---|---|
| Pages (from-to) | 269-273 |
| Number of pages | 5 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 117 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jun 1 2014 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
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Fabrication and characterization of spherical micro semiconductor crystals by laser ablation method. / Shimogaki, Tetsuya; Okazaki, Kota; Yamasaki, Kota; Fusazaki, Koshi; Mizokami, Yasuaki; Tetsuyama, Norihiro; Higashihata, Mitsuhiro; Ikenoue, Hiroshi; Nakamura, Daisuke; Okada, Tatsuo.
In: Applied Physics A: Materials Science and Processing, Vol. 117, No. 1, 01.06.2014, p. 269-273.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Fabrication and characterization of spherical micro semiconductor crystals by laser ablation method
AU - Shimogaki, Tetsuya
AU - Okazaki, Kota
AU - Yamasaki, Kota
AU - Fusazaki, Koshi
AU - Mizokami, Yasuaki
AU - Tetsuyama, Norihiro
AU - Higashihata, Mitsuhiro
AU - Ikenoue, Hiroshi
AU - Nakamura, Daisuke
AU - Okada, Tatsuo
PY - 2014/6/1
Y1 - 2014/6/1
N2 - We have been establishing the technique of fabricating spherical semiconductor microcrystals with suitable diameters for whispering gallery mode (WGM) lasing. Concretely, semiconductor microspheres were synthesized by ablating various semiconductor-sintered targets with focused pulsed laser at high fluences. In this report, dependences of fabricated zinc oxide (ZnO) microstructures on laser wavelengths were investigated. Lasing characteristics and photoluminescence of ZnO microspheres were determined, and photoluminescence of Sb-doped ZnO microspheres were determined. Additionally, it was also found that Sb-doped ZnO and aluminum nitride microspheres can be similarly synthesized. By developing this method, which does not require complex processing, it is expected that efforts in the application of WGM lasing are accelerated in many kinds of semiconductors.
AB - We have been establishing the technique of fabricating spherical semiconductor microcrystals with suitable diameters for whispering gallery mode (WGM) lasing. Concretely, semiconductor microspheres were synthesized by ablating various semiconductor-sintered targets with focused pulsed laser at high fluences. In this report, dependences of fabricated zinc oxide (ZnO) microstructures on laser wavelengths were investigated. Lasing characteristics and photoluminescence of ZnO microspheres were determined, and photoluminescence of Sb-doped ZnO microspheres were determined. Additionally, it was also found that Sb-doped ZnO and aluminum nitride microspheres can be similarly synthesized. By developing this method, which does not require complex processing, it is expected that efforts in the application of WGM lasing are accelerated in many kinds of semiconductors.
UR - http://www.scopus.com/inward/record.url?scp=84919879917&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84919879917&partnerID=8YFLogxK
U2 - 10.1007/s00339-014-8529-6
DO - 10.1007/s00339-014-8529-6
M3 - Article
AN - SCOPUS:84919879917
VL - 117
SP - 269
EP - 273
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 1
ER -