Fabrication and characterization of YBCO thin film on CeO 2/a-plane sapphire substrate

M. Shirakawa, M. Miura, T. Ohazama, Y. Shingai, A. Saito, M. Mukaida, S. Ohshima

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have examined the fabrication conditions of epitaxial CeO2 films on a-plane sapphire substrates, and also examined epitaxial growth of YBa2Cu3O7-δ(YBCO) films on CeO 2/a-plane sapphire substrate. The θ/2θ XRD analysis of these composite films revealed that grains of the CeO2 and YBCO on CeO2/a-plane sapphire substrate were perpendicular to the substrate. From the φ-scan XRD measurement, we found that the four 102 φ-scan peaks of the YBCO film were observed and the peak positions were shifted by 45° compared with those of the CeO2 films. From the peak shifts we could estimate that the angle between the [100] axis of the CeO2 and the [100] axis of the YBCO was 45°. From temperature dependence of resistivity of the YBCO/CeO2/a-plane sapphire substrates, we obtained a zero-resistance temperature (TC) of 88.6 K. We found that their crystallinity and critical temperature (TC) were quite similar to those of YBCO film on CeO2/r-plane sapphire substrate. At the moment, YBCO thin films on a-plane sapphire are inferior to YBCO thin film on r-plane sapphire in terms of surface resistance.

Original languageEnglish
Pages (from-to)1277-1280
Number of pages4
JournalPhysica C: Superconductivity and its applications
Volume412-414
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - Oct 1 2004
Externally publishedYes

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this