SiC and AlN form a solid solution in the wide compositional range, expectantly leading to control of the semiconductive property. In the present work, the SiC-AlN composites were fabricated by sintering process, and evaluated with emphasis on the distribution of SiC and AlN and electrical property. SiC and AlN powders were mixed at a molar ratio between 90:10 and 10:90, and sintered at 1900-2100 °C for 30 min under 50 MPa in Ar atmosphere by spark plasma sintering technique. The sintered bodies reached high densities over 95 % of theoretical, and the grain size increased with an increase in the sintering temperature and the AlN content. The SiC-AlN composites had 3C and 2H phases in SiC-rich composition, while 2H phase only in AIN-rich composition, and the mutual dissolution between SiC and AlN was enhanced at high temperatures. The electrical conductivity decreased with dissolution of AlN into SiC because of the increase in band gap.