Fabrication and evaluation of a thermoelectric microdevice on a free-standing substrate

J. Kurosaki, A. Yamamoto, S. Tanaka, J. Cannon, K. Miyazaki, H. Tsukamoto

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Using shadow masks prepared by standard microfabrication processes, we fabricated in-plane thermoelectric microdevices (4 mm × 4 mm) made of bismuth telluride thin films, and evaluated their performance. We used Bi 0.4Te 3.0Sb 1.6 as the p-type semiconductor and Bi 2.0Te 2.7Se 0.3 as the n-type semiconductor. We deposited p- and n-type thermoelectric thin films on a free-standing thin film of Si 3N 4 (4 mm × 4 mm × 4 μm) on a Si wafer, and measured the output voltages of the microdevices while heating at the bottom of the Si substrate. The maximum output voltage of the thermoelectric device was 48 mV at 373 K.

Original languageEnglish
Pages (from-to)1326-1330
Number of pages5
JournalJournal of Electronic Materials
Volume38
Issue number7
DOIs
Publication statusPublished - Jul 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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