Vertically aligned ZnO nanowires were directly grown on a Mg-doped GaN substrate by nanoparticle-assisted pulsed laser deposition (NAPLD) without a catalyst. The photoluminescence of the ZnO nanowires at room temperature shows visible emission, which may be attributed to the point defects in the ZnO. A ZnO nanowire/GaN heterojunction LED was fabricated by preparing an insulating film of SOG (spin-on-glass) and electrodes. Electroluminescence at a wavelength of 500 to 900 nm was observed at room temperature under forward bias.
|Number of pages||6|
|Journal||Journal of the Illuminating Engineering Institute of Japan (Shomei Gakkai Shi)|
|Publication status||Published - 2013|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering