All in-plane aligned a-axis oriented YBa2Cu3Ox/Gd2CuO 4/YBa2Cu3Ox superconductor/insulator/superconductor (SIS) junction structures are fabricated by a pulsed laser deposition technique and their microstructures are characterized. An insulating barrier of Gd2CuO4 with an atomic graphoepitaxial relation is selected from a lattice-matching point of view for the b-and c-axes of YBa2Cu3Ox at a deposition temperature of the YBa2Cu3Ox films. Preferred orientations and in-plane alignments of electrodes of YBa2Cu3Ox films and barriers of Gd2CuO4 films are confirmed by X-ray diffraction spectroscopy and an X-ray φ-scan technique. X-ray diffraction measurements revealed that all the YBa2Cu3Ox/Gd2CuO 4/YBa2Cu3Ox films are a-axis oriented. The c-axes of the layers are also in-plane aligned.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||3 A|
|Publication status||Published - 1999|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)