Fabrication and microstructure of all in-plane aligned A-Axis oriented superconductor/insulator/superconductor junctions

Masashi Mukaida, Masanobu Kusunoki, Shigetoshi Ohshima

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2 Citations (Scopus)

Abstract

All in-plane aligned a-axis oriented YBa2Cu3Ox/Gd2CuO 4/YBa2Cu3Ox superconductor/insulator/superconductor (SIS) junction structures are fabricated by a pulsed laser deposition technique and their microstructures are characterized. An insulating barrier of Gd2CuO4 with an atomic graphoepitaxial relation is selected from a lattice-matching point of view for the b-and c-axes of YBa2Cu3Ox at a deposition temperature of the YBa2Cu3Ox films. Preferred orientations and in-plane alignments of electrodes of YBa2Cu3Ox films and barriers of Gd2CuO4 films are confirmed by X-ray diffraction spectroscopy and an X-ray φ-scan technique. X-ray diffraction measurements revealed that all the YBa2Cu3Ox/Gd2CuO 4/YBa2Cu3Ox films are a-axis oriented. The c-axes of the layers are also in-plane aligned.

Original languageEnglish
Pages (from-to)1370-1374
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number3 A
Publication statusPublished - Dec 1 1999

Fingerprint

SIS (superconductors)
Superconducting materials
Fabrication
microstructure
Microstructure
fabrication
X ray diffraction
x rays
Pulsed laser deposition
diffraction
pulsed laser deposition
alignment
Spectroscopy
X rays
Electrodes
electrodes
spectroscopy
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "All in-plane aligned a-axis oriented YBa2Cu3Ox/Gd2CuO 4/YBa2Cu3Ox superconductor/insulator/superconductor (SIS) junction structures are fabricated by a pulsed laser deposition technique and their microstructures are characterized. An insulating barrier of Gd2CuO4 with an atomic graphoepitaxial relation is selected from a lattice-matching point of view for the b-and c-axes of YBa2Cu3Ox at a deposition temperature of the YBa2Cu3Ox films. Preferred orientations and in-plane alignments of electrodes of YBa2Cu3Ox films and barriers of Gd2CuO4 films are confirmed by X-ray diffraction spectroscopy and an X-ray φ-scan technique. X-ray diffraction measurements revealed that all the YBa2Cu3Ox/Gd2CuO 4/YBa2Cu3Ox films are a-axis oriented. The c-axes of the layers are also in-plane aligned.",
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N2 - All in-plane aligned a-axis oriented YBa2Cu3Ox/Gd2CuO 4/YBa2Cu3Ox superconductor/insulator/superconductor (SIS) junction structures are fabricated by a pulsed laser deposition technique and their microstructures are characterized. An insulating barrier of Gd2CuO4 with an atomic graphoepitaxial relation is selected from a lattice-matching point of view for the b-and c-axes of YBa2Cu3Ox at a deposition temperature of the YBa2Cu3Ox films. Preferred orientations and in-plane alignments of electrodes of YBa2Cu3Ox films and barriers of Gd2CuO4 films are confirmed by X-ray diffraction spectroscopy and an X-ray φ-scan technique. X-ray diffraction measurements revealed that all the YBa2Cu3Ox/Gd2CuO 4/YBa2Cu3Ox films are a-axis oriented. The c-axes of the layers are also in-plane aligned.

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