Abstract
We have succeeded to fabricate the thin films (350 nm in total thickness) consisting of semiconducting Vanadium-oxide (VO 0.9+x (0.30 ≤ x < 0.37)) nano-particles with 3.47 nm in averaged diameter by using the combined magnetron sputtering and gas aggregation methods. The optical band gap of the film is evaluated as 3.88 eV under the ad hoc assumption of direct allowed optical transition mode by spectroscopic ellipsometry. This value is expanded by 0.18 eV comparing with the estimated VO bulk value. The widening of band gap might be due to the lattice strain and/or the quantum confinement effect of the composed nano-particles.
| Original language | English |
|---|---|
| Pages (from-to) | 43-46 |
| Number of pages | 4 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 18 |
| Issue number | SUPPL. 1 |
| DOIs | |
| Publication status | Published - Oct 1 2007 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Fabrication and optical characterization of vanadium oxide nano-particulates thin film. / Tanemura, Sakae; Miao, L.; Kajino, Y.; Itano, Y.; Tanemura, M.; Toh, S.; Kaneko, Kenji; Mori, Y.
In: Journal of Materials Science: Materials in Electronics, Vol. 18, No. SUPPL. 1, 01.10.2007, p. 43-46.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication and optical characterization of vanadium oxide nano-particulates thin film
AU - Tanemura, Sakae
AU - Miao, L.
AU - Kajino, Y.
AU - Itano, Y.
AU - Tanemura, M.
AU - Toh, S.
AU - Kaneko, Kenji
AU - Mori, Y.
PY - 2007/10/1
Y1 - 2007/10/1
N2 - We have succeeded to fabricate the thin films (350 nm in total thickness) consisting of semiconducting Vanadium-oxide (VO 0.9+x (0.30 ≤ x < 0.37)) nano-particles with 3.47 nm in averaged diameter by using the combined magnetron sputtering and gas aggregation methods. The optical band gap of the film is evaluated as 3.88 eV under the ad hoc assumption of direct allowed optical transition mode by spectroscopic ellipsometry. This value is expanded by 0.18 eV comparing with the estimated VO bulk value. The widening of band gap might be due to the lattice strain and/or the quantum confinement effect of the composed nano-particles.
AB - We have succeeded to fabricate the thin films (350 nm in total thickness) consisting of semiconducting Vanadium-oxide (VO 0.9+x (0.30 ≤ x < 0.37)) nano-particles with 3.47 nm in averaged diameter by using the combined magnetron sputtering and gas aggregation methods. The optical band gap of the film is evaluated as 3.88 eV under the ad hoc assumption of direct allowed optical transition mode by spectroscopic ellipsometry. This value is expanded by 0.18 eV comparing with the estimated VO bulk value. The widening of band gap might be due to the lattice strain and/or the quantum confinement effect of the composed nano-particles.
UR - http://www.scopus.com/inward/record.url?scp=34547598014&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547598014&partnerID=8YFLogxK
U2 - 10.1007/s10854-007-9182-z
DO - 10.1007/s10854-007-9182-z
M3 - Article
AN - SCOPUS:34547598014
VL - 18
SP - 43
EP - 46
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - SUPPL. 1
ER -